UNISONIC TECHNOLOGIES CO., LTD
UT40N04
Preliminary
Power MOSFET
N-CHANNEL LOGIC LEVEL
ENHANCEMENT MODE FIDLD
EFFECT TRANSISTOR
DESCRIPTION
The UTC
40N04
is an N-channel enhancement mode FET using
advanced technology to provide fast switching speed, ruggedized
device design, low on-resistance and cost-effectiveness.
FEATURES
* Low on-Resistance
* Fast Switching Speed
* Halogen Free
SYMBOL
D
G
S
ORDERING INFORMATION
Ordering Number
UT40N04G-TN3-R
Note: G: Gate, D: Drain, S: Source
Package
TO-252
1
G
Pin Assignment
2
D
3
S
Packing
Tape Reel
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Copyright © 2010 Unisonic Technologies Co., Ltd
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QW-R502-467.a
UT40N04
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Avalanche Current
Avalanche Energy
Power Dissipation
T
C
=25°C
T
C
=70°C
Preliminary
SYMBOL
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
RATINGS
40
±20
25
20
75
27
37
30
20
-55~150
-55~150
Power MOSFET
UNIT
V
V
A
mJ
W
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C Unless otherwise specified)
L=0.1mH
T
C
=25°C
T
C
=70°C
Operating Junction Temperature
T
J
°C
Storage Temperature
T
STG
°C
Note:1. Pulse width limited by maximum junction temperature.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
On-State Drain Current (Note 1)
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State
Resistance (Note 1)
Forward Transconductance (Note 1)
Gate Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
(Note 2)
Total Gate Charge
SYMBOL
BV
DSS
I
DSS
I
GSS
I
D(ON)
V
GS(TH)
R
DS(ON)
g
FS
R
g
C
ISS
C
OSS
C
RSS
SYMBOL
θ
JA
θ
JC
RATINGS
40
4.1
MIN
40
1
10
±250
75
2
2.4
26
22
19
30
1.55
1150
157
80
19
9
4.5
3
10
6
26
6
23
1.3
38
29
3
50
45
29
UNIT
°C/W
°C/W
TYP MAX UNIT
V
µA
nA
A
V
mΩ
S
Ω
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=32V, V
GS
=0V
V
DS
=30V, V
GS
=0V, T
J
=125°C
V
DS
=0V, V
GS
=±20V
V
DS
=5V, V
GS
=10V
V
DS
=V
GS
, I
D
=250µA
V
GS
=5V, I
D
=8A
V
GS
=7V, I
D
=8A
V
GS
=10V, I
D
=10A
V
DS
=5V, I
D
=10A
V
GS
=0V, V
DS
=0V, f=1.0MHz
V
GS
=0V, V
DS
=20V, f=1.0MHz
pF
Q
G
(V
GS
=10V)
Q
G
(V
GS
=4.5V)
V
DS
=0.5V
(BR)DSS
, I
D
=10A
Gate to Source Charge
Q
GS
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
V
GS
=10V, V
DS
=20V, I
D
≈-1A,
Rise Time
t
R
R
GS
=6Ω, R
L
=1Ω
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current
I
S
Drain-Source Diode Forward Voltage
V
SD
I
F
=10A, V
GS
=0V
(Note 1)
Reverse Recovery Time
t
RR
I
F
=10A, dI
F
/dt=100A/µs
Reverse Recovery Charge
Q
RR
Note: 1. Pulsde test: Pulse width
≤300µsec,
duty cycle
≤2%.
2. Independent of Operating Temperature.
nC
ns
ns
ns
ns
A
V
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-467.a
UT40N04
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-467.a
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