UNISONIC TECHNOLOGIES CO., LTD
UT4413
P-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The
UT4413
uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
Power MOSFET
FEATURES
* R
DS(ON)
= 8.5mΩ @V
GS
= -10 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
Drain
*Pb-free plating product number: UT4413L
Gate
Source
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
UT4413-S08-R
UT4413L-S08-R
UT4413-S08-T
UT4413L-S08-T
Package
SOP-8
SOP-8
Packing
Tape Reel
Tube
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Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-198.A
UT4413
PIN CONFIGURATION
Power MOSFET
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QW-R502-198.A
UT4413
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25℃, unless otherwise specified)
PARAMETER
Power MOSFET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
-30
V
Gate-Source Voltage
V
GSS
±25
V
Continuous Drain Current (Note 1)
I
D
-15
A
Pulsed Drain Current (Note 2)
I
DM
-80
A
Power Dissipation(T
C
=25°C)
P
D
3
W
℃
Junction a Temperature
T
J
+150
℃
Strong Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
SYMBOL
θ
JA
MIN
TYP
62
MAX
75
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Drain-Source Breakdown Voltage
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Static Drain-Source On-Resistance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
TEST CONDITIONS
V
GS
=0 V, I
D
=-250 µA
V
DS
=-24 V, V
GS
=0 V
V
DS
=0 V, V
GS
= ±25 V
V
DS
=V
GS
, I
D
=-250 µA
V
DS
=-5V, V
GS
=-10 V
V
GS
=-20V, I
D
=-15A
V
GS
=-10 V, I
D
=-15 A
V
GS
=-6 V, I
D
=-10 A
MIN TYP
-30
-1
±100
-1.5
-60
-2.2
5.5
6.6
8.2
-3.5
7
8.5
MAX
UNIT
V
µA
nA
V
A
mΩ
mΩ
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=-15V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=-15V, V
GS
=-10V, I
D
=-15A
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
GS
=-10V,V
DS
=-15V,R
L
=1.0Ω,
R
GEN
=3Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward
V
SD
I
S
=-1A,V
GS
=0V
Voltage(Note2)
Maximum Continuous Drain-Source
I
S
Diode Forward Current
Reverse Recovery Time
t
RR
I
F
=-15 A, dI/dt=100A/μs
Reverse Recovery Charge
Q
RR
I
F
=-15 A, dI/dt=100A/μs
Note: 1. Pulse width limited by T
J(MAX)
2. Pulse width
≤300us,
duty cycle
≤0.5%
max.
3. Surface mounted on 1 in
2
copper pad of FR4 board
4245 5500
983
689
69
15.2
18.8
16.5
23.5
116
82
-0.72
90
pF
nC
ns
-1
5
V
A
ns
nC
59
55
77
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UT4413
TYPICAL CHARACTERISTICS
30
25
20
15
10
5
0
0
1
3
4
2
Drain to Source Voltage,-V
DS
(V)
5
V
GS
=-3.5V
On-Region Characteristics
-4.5V
Drain Current,-I
D
(A)
-5V
-10V
30
25
20
15
10
5
0
2
V
DS
=-5V
Power MOSFET
Transfer Characteristics
Drain Current,-I
D
(A)
-4V
125℃
25℃
2.5
3
3.5
4
Gate to Source Voltage,-V
GS
(V)
4.5
Drain to Source On-Resistance,
R
DS(ON)
(mΩ)
On-Resistance vs. Gate-Source Voltage
30
Drain to Source On-Resistance,
R
DS(ON)
(mΩ)
I
D
=-15A
Reverse Drain Current,-I
S
(A)
25
20
15
10
5
0
4
16
12
8
Gate to Source Voltage,-V
GS
(V)
20
125℃
Normalized On-Resistance
1.0E+01
1.0E+00
Body-Diode Characteristics
125℃
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.0
25℃
25℃
1.0
0.4
0.6
0.2
0.8
Body Diode Forward Voltage,-V
SD
(V)
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QW-R502-198.A
UT4413
TYPICAL CHARACTERISTICS(Cont.)
10
Gate to Source Voltage,-V
GS
(V)
8
6
4
2
0
0
10
20
30
40
50
60
Gate Charge,-Q
G
(nC)
70
Gate-Charge Characteristics
V
DS
=-15V
I
D
=-15A
Capacitance (pF)
Power MOSFET
6000
5000
4000
3000
2000
1000
Capacitance Characteristics
C
ISS
C
OSS
C
RSS
0
0
5
10
15
20
25
Drain to Source Voltage,-V
DS
(V)
30
Drain Current,-I
D
(A)
Normalized Transient Thermal
Resistance,Z
θ
JA
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Power (W)
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QW-R502-198.A
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