UNISONIC TECHNOLOGIES CO., LTD
UTM4953
DUAL P-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The
UTM4953
uses advanced UTC technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
Power MOSFET
SOP-8
FEATURES
* R
DS(ON)
<60mΩ @V
GS
=-10V
* R
DS(ON)
<95mΩ @V
GS
=-4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
(7) (8)
D1
(5) (6)
D2
(2)
G1
(4)
G2
S1
(1)
S2
(3)
ORDERING INFORMATION
Ordering Number
Lead Free
UTM4953L-S08-R
Halogen Free
UTM4953G-S08-R
Package
SOP-8
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-293.B
UTM4953
PIN CONFIGURATION
Power MOSFET
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QW-R502-293.B
UTM4953
ABSOLUTE MAXIMUM RATINGS
(T
A
=25℃, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Power MOSFET
SYMBOL
RATINGS
UNIT
V
DSS
-30
V
V
GSS
±25
V
-4.9
Continuous
I
D
A
Drain Current
Pulsed
I
DM
-30
Power Dissipation
P
D
2.5
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
θ
JA
RATINGS
50
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0V, I
D
=-250µA
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=±25V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-10V, I
D
=-4.9A
V
GS
=-4.5V, I
D
=-3.6A
MIN
-30
-1
±100
-1
-1.5
53
80
1260
340
220
10
15
22
15
22.3
4.65
2
-0.7
18
20
38
25
29
-2
60
95
TYP
MAX
UNIT
V
µA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=-25V, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
(Note)
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
GEN
=-10V, V
DD
=-15V, R
L
=7.5Ω,
R
G
=6Ω, I
D
=-2A
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
Total Gate Charge
Q
G
V
DS
=-15V, V
GS
=-10V, I
D
=-4.6A
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
V
SD
I
SD
=-1.7A, V
GS
=0V
Note: Pulse width≦300µs, Duty cycle≦2%
-1.3
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-293.B
UTM4953
TYPICAL CHARACTERISTICS
Drain-Source On Resistance
60
I
D
=4.9A
On-Resistance,R
DS(ON)
(mΩ)
50
40
30
20
10
0
0
2
4
6
8
10
Gate-Source Voltage,V
GS
(V)
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-293.B
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