UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT10N10
10A, 100V N-CHANNEL
MOSFET
DESCRIPTION
The UTC
UTT10N10
is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide the
customers with a minimum on-state resistance, high switching speed
and ultra low gate charge. It also can withstand high energy pulse in
the avalanche and commutation mode.
Power MOSFET
FEATURES
* R
DS(on)
=142mΩ @V
GS
= 10 V,I
D
=6.4A
* High Switching Speed
* Low C
RSS
(Typically 20pF)
* Low Gate Charge(Typically 12nC)
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT10N10L-TN3-R
UTT10N10G-TN3-R
UTT10N10L-TN3-T
UTT10N10G-TN3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R502-714.a
UTT10N10
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
100
V
Gate-Source Voltage
V
GSS
±25
V
10
A
Continuous
I
D
Drain Current
Pulsed
I
DM
40
A
Avalanche Current
I
AR
12.8
A
95
mJ
Single Pulsed
E
AS
Avalanche Energy
Repetitive
E
AR
6.5
mJ
Peak Diode Recovery dv/dt
dv/dt
6
V/ns
Power Dissipation
P
D
54
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
2.31
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=100V, V
GS
=0V
Forward
V
GS
=+25V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-25V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=6.4A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
Gate to Source Charge
Q
GS
V
DS
=80V, V
GS
=10V, I
D
=10A
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, V
GS
=10V, I
D
=10A,
R
G
=25Ω
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=10A, V
GS
=0V
MIN TYP MAX UNIT
100
1
+100
-100
2.0
142
4.0
180
V
µA
nA
nA
V
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
345 1300
100
20
12
2.5
5.1
5
55
20
25
110
120
60
10
40
1.5
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-714.a
UTT10N10
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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