UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT25P10
25A, 100V P-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
UTT25P10
is a P-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed and a minimum on-state resistance, and it can also withstand
high energy in the avalanche.
This UTC
UTT25P10
is suitable for motor drivers, switching
regulators, converters and relay drivers, etc.
Power MOSFET
FEATURES
* R
DS(ON)
=0.150Ω @ V
GS
=-10V
* High Switching Speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT25P10L-TA3-T
UTT25P10G-TA3-T
UTT25P10L-TN3-T
UTT25P10G-TN3-T
UTT25P10L-TN3-R
UTT25P10G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-220
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R502-597.b
UTT25P10
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (Note 2)
V
DSS
-100
V
Drain-Gate Voltage (R
GS
=20kΩ) (Note 2)
V
DGR
-100
V
Gate-Source Voltage
V
GSS
±20
V
-25
A
Continuous
I
D
Drain Current
Pulsed (Note 3)
I
DM
-60
A
Linear Derating Factor
1.2
W/°C
TO-220
150
Power Dissipation
P
D
W
TO-252
50
Junction Temperature
T
J
-55~+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. T
J
=25°C ~ 150°C
3. Repetitive rating: pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Case
TO-220
TO-252
SYMBOL
θ
JC
RATINGS
0.83
2.5
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
SYMBOL
BV
DSS
I
DSS
I
GSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=Rated BV
DSS
, V
GS
=0V
V
DS
=0.8xRated BV
DSS
,
V
GS
=0V , T
C
=125°C
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
MIN
-100
-1
-25
+100
-100
-2
-4
-3.75
0.150
3000
1500
600
35
165
270
165
50
250
400
250
-1.4
µA
nA
nA
V
V
Ω
pF
pF
pF
ns
ns
ns
ns
V
TYP MAX UNIT
V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Drain to Source On Voltage (Note 1)
V
DS(ON)
I
D
=-25A, V
GS
=-10V
Static Drain-Source On-State Resistance (Note 2)
R
DS(ON)
V
GS
=-10V, I
D
=2.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=-25V,
Output Capacitance
C
OSS
f=1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
I
D
≈12.5A,
V
DS
=-50V,
Rise Time
t
R
R
GS
=50Ω,V
GS
=-10V,
Turn-OFF Delay Time
t
D(OFF)
R
L
=4.0Ω
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 1)
V
SD
I
SD
=-12.5A,
Note: 1. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-597.b
UTT25P10
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-597.b
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