UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT30P06
60V, 30A P-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
UTT30P06
is a P-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed and a minimum on-state resistance. It can also withstand high
energy in the avalanche.
The UTC
UTT30P06
is suitable for low voltage and high speed
switching applications
Power MOSFET
FEATURES
* R
DS(ON)
=0.067Ω @ V
GS
=-10V, I
D
=-15A
* High Switching Speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT30P06L-TA3-T
UTT30P06G-TA3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R502-622.a
UTT30P06
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
-60
V
Drain-Gate Voltage (R
GS
=1.0 MΩ)
V
DGR
-60
V
Continuous
V
GSS
±15
V
Gate-Source Voltage
V
GSM
±25
V
Non−repetitive (t
p
≤10ms)
T
C
=25°C
I
D
-30
A
Continuous
Drain Current
T
C
=100°C
I
D
-19
A
Pulsed (t
p
≤10μs)
I
DM
-105
A
Power Dissipation
125
W
P
D
Derate Above 25°C
0.83
W/°C
Junction Temperature
T
J
+175
°C
Storage Temperature
T
STG
-55~+175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. When surface mounted to an FR4 board using the minimum recommended pad size.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
1.2
UNIT
°C/W
°C/W
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QW-R502-622.a
UTT30P06
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage
Forward
Current
Reverse
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Drain-Source On-Voltage
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
(Note 2)
Gate Charge
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
I
GSS
TEST CONDITIONS
I
D
=-0.25mA, V
GS
=0V
V
DS
=-60V, V
GS
=0V
V
GS
=+15V, V
DS
=0V
V
GS
=-15V, V
DS
=0V
MIN
-60
-10
+100
-100
-2.0
-2.6
0.067
-2.0
-4.0
0.08
-2.9
-2.8
2190
730
310
80
TYP
MAX
UNIT
V
µA
nA
nA
V
Ω
V
V
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
V
ns
µC
V
GS(TH)
V
DS
=V
GS
, I
D
=-250µA
R
DS(ON)
V
GS
=-10V, I
D
=-15A
V
GS
=-10V, I
D
=-30A
V
DS(ON)
V
GS
=-10V, I
D
=-15A, T
J
=150°C
C
ISS
C
OSS
C
RSS
Q
T
Q
1
Q
2
Q
3
V
GS
=0V, V
DS
=-25V, f=1.0MHz
1562
524
154
54
9.0
26
20
14.7
25.9
98
52.4
-2.3
175
0.965
V
GS
=-10V, V
DS
=-48V, I
D
=-30A
Turn-ON Delay Time
t
D(ON)
V
GS
=-10V, V
DD
=-30V,
Rise Time
t
R
Turn-OFF Delay Time
t
D(OFF)
I
D
=-30A, R
G
=9.1Ω
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=-30A, V
GS
=0V
Body Diode Reverse Recovery Time
t
RR
I
S
=-30A, V
GS
=0V,
dI
S
/dt=-100A/µs
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
2. Switching characteristics are independent of operating junction temperature.
30
50
200
100
-3.0
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-622.a
51mcu
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