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UTT40P04G-TM3-T

Description
Power Field-Effect Transistor, 50A I(D), 40V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251,
CategoryDiscrete semiconductor    The transistor   
File Size172KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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UTT40P04G-TM3-T Overview

Power Field-Effect Transistor, 50A I(D), 40V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251,

UNISONIC TECHNOLOGIES CO., LTD
UTT40P04
50A, 40V P-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
UTT40P04
is a P-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed and a minimum on-state resistance. It can also withstand high
energy in the avalanche.
This UTC
UTT40P04
is suitable for Inverter or Power supplies.
FEATURES
* R
DS(ON)
< 20mΩ @ V
GS
=-10V, I
D
=-12.7A,
R
DS(ON)
< 30 mΩ @ V
GS
=-4.5V, I
D
=-10.4A
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-251
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Tape Reel
Ordering Number
Lead Free
Halogen Free
UTT40P04L-TA3-T
UTT40P04G-TA3-T
UTT40P04L-TM3-T
UTT40P04G-TM3-T
UTT40P04L-TN3-R
UTT40P04G-TN3-R
UTT40P04L-TND-R
UTT40P04G-TND-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-616.E

UTT40P04G-TM3-T Related Products

UTT40P04G-TM3-T UTT40P04G-TN3-R UTT40P04L-TN3-R UTT40P04L-TND-R UTT40P04G-TA3-T UTT40P04L-TA3-T UTT40P04L-TM3-T UTT40P04G-TND-R UTT40P04_15
Description Power Field-Effect Transistor, 50A I(D), 40V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, Power Field-Effect Transistor, 50A I(D), 40V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, P-CHANNEL POWER MOSFET Power Field-Effect Transistor, 50A I(D), 40V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252D, 3/2 PIN Power Field-Effect Transistor, 50A I(D), 40V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Power Field-Effect Transistor, 50A I(D), 40V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Power Field-Effect Transistor, 50A I(D), 40V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, P-CHANNEL POWER MOSFET P-CHANNEL POWER MOSFET
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