UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT80N10
80A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
UTT80N10
is an N-channel power MOSFET using
UTC’s advanced technology to provide the customers with perfect
R
DS(ON)
, high switching speed, high current capacity and low gate
charge.
The UTC
UTT80N10
is suitable for DC-DC converters, Off-Line
UPS, High Voltage Synchronous Rectifier, Primary Switch for 48V
and 24V Systems, etc.
Power MOSFET
FEATURES
* R
DS(ON)
=18mΩ @ V
GS
=10V,I
D
=80A
* High Switching Speed
* High Current Capacity
* Low Gate Charge(typical 49nC)
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT80N10L-TA3-T
UTT80N10G-TA3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-712.a
UTT80N10
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
100
V
Gate-Source Voltage
V
GSS
±20
V
80
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
320
A
Single Pulsed Avalanche Energy (Note 3)
E
AS
416
mJ
Power Dissipation
P
D
211
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
3. L = 0.13mH, I
AS
= 80A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62
0.59
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=80V, V
GS
=0V
Forward
V
GS
=+20V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=80A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
Gate to Source Charge
Q
GS
V
GS
=10V, V
DD
=50V, I
D
=80A
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=50V, I
D
=80A, V
GS
=10V,
R
GS
=5.0Ω
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
SD
=80A
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Body Diode Reverse Recovery Time
t
rr
I
S
=40A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
Q
RR
MIN TYP MAX UNIT
100
V
1
µA
+100 nA
-100 nA
4.5
15
4152
485
220
350
23
16
90
100
450
200
0.99 1.25
80
320
70 105
202 303
5.5
18
V
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
A
A
ns
nC
3.5
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-712.a
UTT80N10
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-712.a
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