UNISONIC TECHNOLOGIES CO., LTD
DTA114E
DIGITAL TRANSISTOR
(BUILT- IN BIAS RESISTORS)
1
PNP SILICON TRANSISTOR
FEATURES
1
TO-92
TO-92SP
* Built-in Bias Resistors that Implies Easy ON/OFF Applications.
* The Bias Resistors are Thin-Film Resistors with Complete Isolation
to Allow Positive Input.
3
2 1
SOT-23
3
2 1
SOT-323
3
2
1
EQUIVALENT CIRCUIT
SOT-523
ORDERING INFORMATION
Package
SOT-23
SOT-323
SOT-523
TO-92
TO-92
TO-92SP
Pin Assignment
1
2
3
G
I
O
G
I
O
G
I
O
G
O
I
G
O
I
G
O
I
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Box
Bulk
Bulk
Ordering Number
Lead Free
Halogen Free
-
DTA114EG-AE3-R
-
DTA114EG-AL3-R
-
DTA114EG-AN3-R
DTA114EL-T92-B
DTA114EG-T92-B
DTA114EL-T92-K
DTA114EG-T92-K
DTA114EL-T9S-K
DTA114EG-T9S-K
Note: Pin assignment: G: GND
I: IN
O: OUT
MARKING
SOT-23 / SOT-323 / SOT-523
TO-92 / TO-92SP
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R206-046.F
DTA114E
PARAMETER
SYMBOL
V
CC
V
IN
I
OUT(MAX)
PNP SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS
(T
A
= 25℃, unless otherwise specified.)
RATINGS
UNIT
Supply Voltage
-50
V
Input Voltage
-40 ~ +10
V
Output Current
-100
mA
SOT-523
150
mW
SOT-23/SOT-323
200
mW
Power Dissipation
P
D
TO-92
625
mW
TO-92SP
550
mW
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
= 25℃, unless otherwise specified.)
SYMBOL
V
IN(OFF)
V
IN(ON)
V
OUT(ON)
I
IN
I
OUT(OFF)
TEST CONDITIONS
V
CC
= -5V, I
OUT
= -100μA
V
OUT
= -0.3V, I
OUT
= -10mA
I
OUT
/I
IN
= -10mA/-0.5mA
V
IN
= -5V
V
CC
= -50V , V
IN
=0V
V
OUT
= -5V, I
OUT
= -5mA
MIN
TYP
MAX
-0.5
-3
-0.3
-0.88
-0.5
30
7
0.8
V
CE
= -10 V, I
E
=5mA, f=100MHz
10
1
250
13
1.2
kΩ
MHz
UNIT
V
V
mA
µA
PARAMETER
OFF CHARACTERISTICS
Input Voltage
Output Voltage
Input Current
Output Current
ON CHARACTERISTICS
DC Current Gain
h
FE
SMALL SIGNAL CHARACTERISTICS
Input Resistance
R
1
Resistance Ratio
R
2
/R
1
Transition Frequency
f
T
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DTA114E
■
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Input Voltage vs. Output Current
(ON Characteristics)
-100
-50
-10m
Output Current vs. Input Voltage
(OFF Characteristics)
-5m
-2m
V
OUT
=-0.3V
Output Current, I
OUT
(A)
V
CC
=-5V
T
A
= 100℃
25℃
-40℃
Input Voltage, V
IN(ON)
(V)
-20
-10
-5
-1m
-500μ
-200μ
-100μ
-50μ
-20μ
-10μ
-5μ
T
A
= - 40℃
25℃
100℃
-2
-1
-500m
-200m
-100m
-100μ -200μ
-500μ-1m -2m
-5m
-10m -20m
-50m -100m
-2μ
-1μ
0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
Output Current, I
OUT
(A)
Input Voltage, V
IN(OFF)
(V)
DC Current Gain vs. Output Current
1k
500
-1
Output Voltage vs. Output Current
l
OUT
/l
IN
=20
T
A
= 100℃
25℃
-40℃
V
OUT
=-5V
T
A
= 100℃
25℃
Output Voltage, V
OUT (ON)
(V)
-40℃
-500m
DC Current Gain, hFE
200
100
50
-200m
-100m
-50m
20
10
5
-20m
-10m
-5m
2
1
-100μ -200μ -500μ-1m -2m
-5m
-10m -20m
-50m -100m
-2m
-1m
-100μ-200μ -500μ -1m -2m
-5m
-10m -20m -50m -100m
Output Current, I
OUT
(A)
Output Current, I
OUT
(A)
U TC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
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