UNISONIC TECHNOLOGIES CO., LTD
UF3205
HEXFET POWER MOSFET
DESCRIPTION
The UTC
UF3205
uses advanced technology to provide
excellent R
DS(ON)
, fast switching, low gate charge, and extremely
efficient. This device is suitable for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
Power MOSFET
FEATURES
* R
DS(ON)
<8mΩ @V
GS
=10V
* Ultra Low Gate Charge ( 146nC max )
* Low Reverse Transfer Capacitance ( C
RSS
= typ. 211 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF3205L-TA3-T
UF3205G-TA3-T
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R502-304.A
UF3205
ABSOLUTE MAXIMUM RATINGS
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
±20
V
Gate-Source Voltage
V
GSS
Continuous (V
GS
=10V)
I
D
110
Drain Current
A
Pulsed (Note 2)
I
DM
390
Avalanche Current (Note 2)
I
AR
62
A
Repetitive(Note 2)
E
AR
20
Avalanche Energy
mJ
Single Pulsed(Note 3)
E
AS
1050
Power Dissipation
(T
C
=25°C)
P
D
200
W
Junction Temperature
T
J
+175
°C
Storage Temperature
T
STG
-55 ~ +175
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. T
J
=25°C, L=138μH, R
G
=25Ω, I
AS
=62A
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
MIN
TYP
MAX
62
0.75
MIN
55
25
±100
0.057
2.0
4.0
8.0
3247
781
211
146
35
54
14
101
50
65
4.5
7.5
1.3
110
390
69
143
104
215
TYP
UNIT
°C/W
°C/W
MAX UNIT
V
μA
nA
V/°C
V
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
nH
nH
V
A
A
ns
nC
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250μA
Drain-Source Leakage Current
I
DSS
V
DS
=55V,V
GS
=0V
Gate-Source Leakage Current
I
GSS
V
GS
=±20V, V
DS
=0V
Breakdown Voltage Temperature
△
BV
DSS
/△T
J
Reference to 25°C, I
D
=1mA
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-Resistance (Note)
R
DS(ON)
V
GS
=10V, I
D
=62A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
Gate Source Charge
Q
GS
V
DS
=44V, I
D
=62A, V
GS
=10V
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=28V, I
D
=62A, R
G
=4.5Ω,
V
GS
=10V (Note)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
Internal Drain Inductance
L
D
Internal Source Inductance
L
S
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
V
SD
I
S
=62A ,V
GS
=0V
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Body Diode Reverse Recovery Time
t
RR
I
F
=62A, dI/dt=100A/μs (Note)
Body Diode Reverse Recovery Charge
Q
RR
Note: Pulse width≤400μs; duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-304.A
UF3205
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-304.A
UF3205
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
2A Switching Test Circuit
2B Switching Waveforms
Q
G
V
GS
Q
GS
Q
GD
V
D
Charge
3A Gate Charge Test Circuit
3B Gate Charge Waveform
BV
DSS
I
D(t)
V
DD
I
AS
t
p
V
DS(t)
Time
4A Unclamped Inductive Switching Test Circuit
4B
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-304.A
UF3205
TYPICAL CHARACTERISTICS
300
250
Drain Current, I
D
(µA)
200
150
100
50
0
10 20 30 40 50 60 70
0
Drain-Source Breakdown Voltage, BV
DSS
(V)
Drain-Source On-State Resistance
Characteristics
Drain Current, I
D
(µA)
Drain Current vs.
Drain-Source Breakdown Voltage
300
250
200
150
100
50
0
0
Power MOSFET
Drain Current vs.
Gate Threshold Voltage
1.0 1.5
2.0 2.5 3.0
0.5
Gate Threshold Voltage, V
TH
(V)
Drain Current vs.
Source to Drain Voltage
20
16
Drain Current, I
D
(A)
12
8
4
0
12
10
Drain Current, I
D
(A)
8
6
4
2
0
50
100
150
200
0
Drain to Source Voltage, V
DS
(mV)
0
0.4
0.6
0.8
1.0
0.2
Source to Drain Voltage, V
SD
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-304.A
51mcu
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