UNISONIC TECHNOLOGIES CO., LTD
UF8010
Preliminary
Power MOSFET
80A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
UF8010
uses advanced technology to provide
excellent R
DS(ON)
, fast switching speed, low gate charge, and
excellent efficiency. This device is suitable for high frequency DC-DC
converters, UPS and motor control.
FEATURES
* R
DS(ON)
:12mΩ (Typ.)
* Lower gate-drain charge for lower switching losses
* Perfect avalanche voltage and current performance
* Fully characterized capacitance including effective C
OSS
to simplify
design
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UF8010L-TA3-T
UF8010G-TA3-T
TO-220
UF8010L-TF3-T
UF8010G-TF3-T
TO-220F
UF8010L-TQ2-T
UF8010G-TQ2-T
TO-263
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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UF8010
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate to Source Voltage
V
GS
±20
V
Continuous Drain Current (V
GS
=10V,T
C
=25°C)
I
D
80 (Note 2)
A
Pulsed Drain Current
I
DM
320
A
Single Pulse (Note 2)
E
AS
310
mJ
Avalanche Energy
26
mJ
Repetitive
E
AR
Avalanche Current
I
AR
45
A
Peak Diode Recovery dv/dt (Note 3)
dv/dt
16
V/ns
TO-220 / TO-263
260
W
Power Dissipation(T
C
=25°C)
TO-220F
54
W
P
D
TO-220 / TO-263
1.8
W/°C
Derating above 25°C
TO-220F
0.36
W/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ + 175
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting T
J
= 25°C, L = 0.31mH, R
G
=25Ω, I
AS
= 45A.
3. I
SD
≤45A,
di/dt≤110A/μs, V
DD
≤BV
DSS
, T
J
≤
175°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220 / TO-263
Junction to Case
TO-220F
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.57
2.3
UNIT
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-348.c
UF8010
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0 V, I
D
=250μA
Drain-Source Leakage Current
I
DSS
V
DS
=100V,V
GS
=0V
Gate-Source Forward Current
V
GS
= 20 V
I
GSS
Gate-Source Reverse Current
V
GS
= -20 V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 45A (Note 1)
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25 V,V
GS
=0V, f =1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Rise Time
t
R
V
DS
=50V,I
D
= 80A, R
G
= 39Ω
V
GS
= 10V (Note 1)
Turn-Off Delay Time
t
D(OFF)
Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=80V, V
GS
=10V
Gate-Source Charge
Q
GS
I
D
= 80A (Note 1)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
=80 A ,V
GS
=0 V,
Drain-Source Diode Forward Voltage
V
SD
T
J
= 25°C (Note 1)
Maximum Continuous Drain-Source
I
S
Diode Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current (Note 1)
I
F
=80A, V
DD
=50V, T
J
= 150℃
Reverse Recovery Time
t
RR
di/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Note: 1. Pulse width
≤
300μs; duty cycle
≤
2%
MIN
100
20
200
-200
2.0
12
3830
480
59
15
130
61
120
81
22
26
4.0
15
TYP MAX UNIT
V
μA
nA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
nC
120
1.3
80
320
99
460
150
700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF8010
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-348.c
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