UNISONIC TECHNOLOGIES CO., LTD
UF830
4.5A, 500V, 1.5Ω, N-CHANNEL
POWER MOSFET
1
1
Power MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power
switching applications such as switching regulators, switching
converters, solenoid, motor drivers, relay drivers.
TO-220
TO-220F
FEATURES
* R
DS(ON)
=1.5Ω
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
1
1
TO-220F1
TO-220F2
1
TO-263
1
TO-262
SYMBOL
1
TO-251
1
TO-252
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UF830L-TA3-T
UF830G-TA3-T
TO-220
UF830L-TF3-T
UF830G-TF3-T
TO-220F
UF830L-TF1-T
UF830G-TF1-T
TO-220F1
UF830L-TF2-T
UF830G-TF2-T
TO-220F2
UF830L-TM3-T
UF830G-TM3-T
TO-251
UF830L-TN3-R
UF830G-TN3-R
TO-252
UF830L-T2Q-T
UF830G-T2Q-T
TO-262
UF830L-TQ2-R
UF830G-TQ2-R
TO-263
UF830L-TQ2-T
UF830G-TQ2-T
TO-263
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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QW-R502-046,G
UF830
ABSOLUTE MAXIMUM RATINGS
(
T
A
= 25°C, Unless Otherwise Specified.)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (T
J
=25°C ~125°C)
V
DS
500
V
Drain to Gate Voltage (R
GS
=20kΩ, T
J
=25°C ~125°C)
V
DGR
500
V
Gate to Source Voltage
V
GS
±30
V
Continuous
I
D
4.5
A
Drain Current
Pulsed
I
DM
18
A
73
W
TO-220/TO-262/TO-263
TO-220F/ TO-220F1
38
W
Power Dissipation
P
D
(T
C
= 25°C)
TO-220F2
40
TO-251/TO-252
46
W
Single Pulse Avalanche Energy Rating (Note 2)
E
AS
300
mJ
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. V
DD
=50V, starting T
J
=25°C, L=25mH, R
G
=25Ω, peak I
AS
=4.5A
THERMAL DATA
PARAMETER
TO-220/TO-262/TO-263
TO-220F/ TO-220F1
Junction to Ambient
TO-220F2
TO-251/TO-252
TO-220/TO-262/TO-263
TO-220F/ TO-220F1
Junction to Case
TO-220F2
TO-251/TO-252
SYMBOL
θ
JA
RATINGS
62.5
62.5
62.5
100.3
1.71
3.31
3.125
2.7
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
θ
Jc
ELECTRICAL SPECIFICATIONS
(T
A
=25°C, unless otherwise specified.)
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
On-State Drain Current (Note 1)
Drain-Source Leakage Current
SYMBOL
BV
DSS
V
GS(TH)
I
D(ON)
I
DSS
TEST CONDITIONS
I
D
=250μA, V
GS
=0V
V
GS
=V
DS
, I
D
=250μA
V
DS
>I
D(ON)
×R
DS(ON)MAX
, V
GS
=10V
V
DS
= Rated BV
DSS
, V
GS
=0V
V
DS
=0.8×Rated BV
DSS
V
GS
=0V, T
J
= 125°C
V
GS
=±30V
I
D
=2.5A, V
GS
=10V (Note 2)
V
DS
≥10V,
I
D
=2.7A
MIN
500
2.0
4.5
TYP MAX UNIT
V
4.0
V
A
25
μA
250
1.3
4.2
10
15
33
16
±100
1.5
17
23
53
23
μA
nA
Ω
S
ns
ns
ns
ns
Gate-Source Leakage Current
I
GSS
Static Drain-Source On-State Resistance
R
DS(ON)
Forward Transconductance (Note 1)
g
FS
2.5
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=250V, I
D
≈4.5A
R
GS
=12Ω, R
L
=54Ω (Note 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Note: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
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QW-R502-046,G
UF830
Power MOSFET
ELECTRICAL SPECIFICATIONS(Cont.)
(T
A
=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Total Gate Charge
Q
G
V
GS
=10V, I
D
=4.5A
V
DS
=0.8×Rated BV
DSS
Gate-Source Charge
Q
GS
I
G(REF)
=1.5mA (Note 3)
Gate-Drain Charge
Q
GD
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V, V
GS
=0V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
Note: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
TYP MAX UNIT
22
32
nC
3.5
nC
11
nC
600
pF
100
pF
20
pF
INTERNAL PACKAGE INDUCTANCE
PARAMETER
SYMBOL
MIN
TYP
3.5
4.5
7.5
MAX UNIT
nH
nH
nH
Internal Drain Inductance
Measured from the contact screw on tab to center of die
L
D
Measured from the drain lead(6mm from package) to center of die
Internal Source Inductance
Measured from the source lead(6mm from header) to source bond pad
L
S
Remark:
Modified MOSFET symbol showing the internal devices inductances as below.
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage
V
SD
T
J
=25°C,I
SD
=4.5A, V
GS
=0V(Note 1)
Continuous Source to Drain Current
I
SD
Note 2
Pulse Source to Drain Current
I
SDM
Reverse Recovery Time
t
rr
T
J
=25°C, I
SD
=4.5A, dI/dt=100A/μs
180
Reverse Recovery Charge
Q
RR
T
J
=25°C, I
SD
=4.5A, dI/dt=100A/μs
0.96
NOTE : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
D
TYP
MAX UNIT
1.6
V
5.5
A
18
A
760
ns
4.3
μC
350
2.2
G
S
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QW-R502-046,G
UF830
TEST CIRCUITS AND WAVEFORMS
V
DS
Power MOSFET
L
Vary t
P
to Obtain
Required Peak I
AS
V
GS
DUT
0V
t
p
+
V
DD
-
R
G
I
AS
0.01Ω
Unclamped Energy Test Circuit
Unclamped Energy Waveforms
R
L
+
V
DD
-
DUT
R
G
V
GS
Switching Time Test Circuit
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QW-R502-046,G
UF830
TEST CIRCUITS AND WAVEFORMS (Cont.)
t
ON
t
DLY(ON)
t
R
V
DS
90%
t
OFF
t
DLY(OFF)
t
F
Power MOSFET
90%
10%
90%
0
10%
V
GS
0
10%
50%
PULSE WIDTH
50%
Resistive Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveforms
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QW-R502-046,G
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