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UF830ZL-TF3-T

Description
4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size270KB,8 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
Download Datasheet Parametric Compare View All

UF830ZL-TF3-T Overview

4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET

UF830ZL-TF3-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)300 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)4.5 A
Maximum drain-source on-resistance1.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)18 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
UF830Z
4.5A, 500V, 1.5Ω, N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power
switching applications, such as switching regulators, switching
converters, solenoid, motor drivers and related drivers.
FEATURES
* R
DS(ON)
< 1.5Ω @ I
D
=2.5A, V
GS
=10V
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* ESD Protected
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
TO-220F
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Ordering Number
Lead Free
Halogen Free
UF830ZL-TF3-T
UF830ZG-TF3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
UF830ZL-TF3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TF3: TO-220F
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-612.B

UF830ZL-TF3-T Related Products

UF830ZL-TF3-T UF830Z_15 UF830ZG-TF3-T
Description 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET
Is it Rohs certified? conform to - conform to
Maker UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code TO-220AB - TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3
Contacts 3 - 3
Reach Compliance Code compli - compli
Avalanche Energy Efficiency Rating (Eas) 300 mJ - 300 mJ
Shell connection ISOLATED - ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V - 500 V
Maximum drain current (ID) 4.5 A - 4.5 A
Maximum drain-source on-resistance 1.5 Ω - 1.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB - TO-220AB
JESD-30 code R-PSFM-T3 - R-PSFM-T3
Number of components 1 - 1
Number of terminals 3 - 3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type N-CHANNEL - N-CHANNEL
Maximum pulsed drain current (IDM) 18 A - 18 A
surface mount NO - NO
Terminal form THROUGH-HOLE - THROUGH-HOLE
Terminal location SINGLE - SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
Base Number Matches 1 - 1
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