UNISONIC TECHNOLOGIES CO., LTD
30N06
60V, 30A N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
30N06
is a low voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and excellent avalanche
characteristics. This power MOSFET is usually used at automotive
applications in power supplies, high efficient DC to DC converters
and battery operated products.
Power MOSFET
1
TO-252
1
TO-220
FEATURES
* R
DS(ON)
= 40mΩ@V
GS
= 10 V
* Ultra low gate charge ( typical 20nC )
* Low reverse transfer Capacitance ( C
RSS
= typical 80 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
1
TO-220F
SYMBOL
2.Drain
1
TO-220F2
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
30N06L-TA3-T
30N06G-TA3-T
TO-220
30N06L-TF2-T
30N06G-TF2-T
TO-220F2
30N06L-TF3-T
30N06G-TF3-T
TO-220F
30N06L-TN3-T
30N06G-TN3-T
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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1 of 8
QW-R502-087.E
30N06
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25℃, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate to Source Voltage
SYMBOL
V
DSS
V
GSS
Power MOSFET
RATINGS
UNIT
60
V
±20
V
T
C
= 25℃
30
A
Continuous Drain Current
I
D
T
C
= 100℃
21.3
A
Pulsed Drain Current (Note 2)
I
DM
120
A
300
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
8
mJ
TO-220
79
Power Dissipation
TO-220F/ TO-220F2
P
D
45
W
TO-252
44
Junction Temperature
T
J
+150
℃
Operation Temperature
T
OPR
-55 ~ +150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature
3. L=0.66mH, I
AS
=30A, V
DD
=25V, R
G
=20Ω, Starting T
J
=25℃
THERMAL DATA
PARAMETER
TO-220
Junction to Ambient
TO-220F/TO-220F2
TO-252
TO-220
Junction to Case
TO-220F/TO-220F2
TO-252
SYMBOL
θ
JA
RATING
62
62.5
110
1.9
2.7
2.85
UNIT
°C/W
θ
JC
°C/W
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QW-R502-087.E
30N06
ELECTRICAL CHARACTERISTICS
(T
C
= 25℃, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0 V, I
D
= 250
μA
60
V
Drain-Source Leakage Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10
μA
100 nA
Forward
V
GS
= 20V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -20V, V
DS
= 0 V
-100 nA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25℃
0.06
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 15 A
32
40
mΩ
DYNAMIC CHARACTERISTICS
800
pF
Input Capacitance
C
ISS
V
GS
= 0 V, V
DS
= 25 V,
Output Capacitance
C
OSS
300
pF
f = 1MHz
Reverse Transfer Capacitance
C
RSS
80
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
12
ns
Turn-On Rise Time
t
R
79
ns
V
DD
= 30V, I
D
=15 A, V
GS
=10V
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
50
ns
Turn-Off Fall Time
t
F
52
ns
Total Gate Charge
Q
G
20
30
nC
V
DS
= 60V, V
GS
= 10 V,
Gate-Source Charge
Q
GS
6
nC
I
D
= 24A (Note 1, 2)
Gate-Drain Charge
Q
GD
9
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 30A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
30
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
120
A
Forward Current
Notes: 1. Pulse Test : Pulse width
≤300μs,
Duty cycle
≤
2%
2. Essentially independent of operating temperature.
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QW-R502-087.E
30N06
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-087.E
30N06
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
12V
50kΩ
0.2μF
0.3μF
Same Type
as D.U.T.
10V
V
DS
Q
GS
Q
G
Q
GD
V
GS
DUT
1mA
V
G
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-087.E
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