UNISONIC TECHNOLOGIES CO., LTD
Preliminary
MMBF170
0.5A, 60V N-CHANNEL
ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR
DESCRIPTION
The UTC
MMBF170
is an N-channel enhancement MOSFET
using UTC’s advanced technology to provide the customers with
perfect R
DS(ON)
, low input capacitance, low gate threshold voltage
and high switching speed.
Power MOSFET
FEATURES
* R
DS(ON)
<5mΩ @ V
GS
=10V,I
D
=0.2A
* High Switching Speed
* Low Input Capacitance(typical 22pF)
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MMBF170L-AE2-R
MMBF170G-AE2-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
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QW-R502-629.a
MMBF170
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
60
V
Continuous
±20
V
Gate-Source Voltage
V
GSS
Pulsed
±40
V
Drain-Gate Voltage R
GS
≤1.0MΩ
V
DGR
60
V
Continuous
I
D
500
mA
Drain Current (Note 2)
Pulsed
I
DM
800
mA
Power Dissipation (Note 2)
225
mW
P
D
Derating above T
A
=25°C (Note 2)
1.80
mW/°C
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Valid provided that terminals are kept at specified ambient temperature.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
SYMBOL
θ
JA
RATINGS
556
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
(Note 1)
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
I
D
=100µA, V
GS
=0V
V
DS
=60V, V
GS
=0V
V
DS
=0V, V
GS
=+15V
V
DS
=0V, V
GS
=-15V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=10V, I
D
=200mA
V
GS
=4.5V, I
D
=50mA
V
DS
=10V, I
D
=0.2A
MIN TYP MAX UNIT
60
70
1.0
+10
-10
0.8
2.1
3.0
5.0
5.3
V
µA
nA
nA
V
Ω
mS
22
11
2.0
40
30
5.0
10
10
pF
pF
pF
ns
ns
Forward Transconductance
g
FS
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Turn-OFF Delay Time
t
D(OFF)
Notes: 1. Pulse width
≤300µs,
duty cycle
≤2%.
80
V
GS
=0V, V
DS
=10V, f=1.0MHz
V
DD
=25V, I
D
=0.5A, V
GS
=10V,
R
GEN
=50Ω
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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