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MMBT5089G-AE3-R

Description
NPN GENERAL PURPOSE AMPLIFIER
CategoryDiscrete semiconductor    The transistor   
File Size350KB,7 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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MMBT5089G-AE3-R Overview

NPN GENERAL PURPOSE AMPLIFIER

MMBT5089G-AE3-R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)450
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
UNISONIC TECHNOLOGIES CO., LTD
MMBT5088/MMBT5089
NPN GENERAL PURPOSE
AMPLIFIER
DESCRIPTION
3
NPN SILICON TRANSISTOR
The devices are designed for low noise, high gain, general
purpose amplifier applications at collector currents from 1μA to
50mA.
2
1
SOT-23
(JEDEC TO-236)
ORDERING INFORMATION
Ordering Number
MMBT5088G-AE3-R
MMBT5089G-AE3-R
Pin Assignment: E: Emitter
B: Base
Package
SOT-23
SOT-23
C: Collector
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Note:
MARKING
UTC MMBT5088
1QG
UTC MMBT5089
1RG
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 7
QW-R206-033.C

MMBT5089G-AE3-R Related Products

MMBT5089G-AE3-R MMBT5088G-AE3-R MMBT5089_15
Description NPN GENERAL PURPOSE AMPLIFIER NPN GENERAL PURPOSE AMPLIFIER NPN GENERAL PURPOSE AMPLIFIER
Is it Rohs certified? conform to conform to -
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD -
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 -
Reach Compliance Code compli compli -
Maximum collector current (IC) 0.1 A 0.1 A -
Collector-emitter maximum voltage 25 V 30 V -
Configuration SINGLE SINGLE -
Minimum DC current gain (hFE) 450 350 -
JEDEC-95 code TO-236 TO-236 -
JESD-30 code R-PDSO-G3 R-PDSO-G3 -
Number of components 1 1 -
Number of terminals 3 3 -
Maximum operating temperature 150 °C 150 °C -
Minimum operating temperature -40 °C -40 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type NPN NPN -
surface mount YES YES -
Terminal form GULL WING GULL WING -
Terminal location DUAL DUAL -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
transistor applications AMPLIFIER AMPLIFIER -
Transistor component materials SILICON SILICON -
Nominal transition frequency (fT) 50 MHz 50 MHz -
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