UNISONIC TECHNOLOGIES CO., LTD
10N60
10A, 600V N-CHANNEL
POWER MOSFET
1
Power MOSFET
TO-220
DESCRIPTION
The
UTC 10N60
is a high voltage and high current power MOSFET,
designed to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
1
TO-220F
FEATURES
* R
DS(ON)
= 0.8Ω@V
GS
=10V
* Low gate charge ( typical 44nC)
* Low C
RSS
( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
1
TO-220F1
1
TO-220F2
SYMBOL
2.Drain
1
TO-263
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
10N60L-TA3-T
10N60G-TA3-T
TO-220
10N60L-TF1-T
10N60G-TF1-T
TO-220F1
10N60L-TF2-T
10N60G-TF2-T
TO-220F2
10N60L-TF3-T
10N60G-TF3-T
TO-220F
10N60L-TQ2-R
10N60G-TQ2-R
TO-263
10N60L-TQ2-T
10N60G-TQ2-T
TO-263
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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QW-R502-119.J
10N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
± 30
V
Avalanche Current (Note 2)
I
AR
10
A
10
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
38
A
700
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
15.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/ TO-263
156
Power Dissipation
TO-220F/TO-220F1
P
D
50
W
TO-220F2
52
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 14.2mH, I
AS
= 10A, V
DD
= 50V, R
G
= 25
Ω
Starting T
J
= 25°C
4. I
SD
≤
9.5A, di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-263
SYMBOL
θ
JA
θ
JC
RATING
62.5
0.8
2.5
2.4
0.7
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
( T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
600
V
1
µA
100 nA
-100 nA
V/°C
4.0
0.8
V
Ω
V
GS
= 0V, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
Forward
V
GS
= 30 V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
I
D
=250µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 4.75A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
f=1.0 MHz
Reverse Transfer Capacitance
C
RSS
Gate Resistance
R
G
V
DS
=0V, V
GS
=0V, f =1MHz
0.7
2.0
0.72
1570 2040 pF
166 215 pF
18
24
pF
0.25
1.4
Ω
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10N60
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=300V, I
D
=10A,
R
G
=25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, I
D
=10A,
Gate-Source Charge
Q
GS
V
GS
=10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
=10A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
S
= 10A,
dI
F
/ dt = 100 A/µs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test : Pulse width
≤300µs,
Duty cycle
≤2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
23
55
69 150
144 300
77 165
44
57
6.7
18.5
1.4
10
38
420
4.2
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
µC
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QW-R502-119.J
10N60
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4 of 8
QW-R502-119.J
10N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-119.J
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