Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005
General Description
The APT13005 series are high voltage, high speed,
high efficiency switching transistor, and it is specially
designed for off-line switch mode power supplies with
low output power.
The APT13005 series is available in TO-220-3, TO-
220-3(2), and TO-220F-3 packages.
Features
·
·
·
·
High Switching Speed
High Collector-Emitter Voltage: 700V
Low Cost
High Efficency
Applications
·
·
Battery Chargers for Mobile Phone
Power Supply for DVD/STB
TO-220F-3
TO-220-3
TO-220-3(2)
Figure 1. Package Types of APT13005
Aug. 2010 Rev 1. 1
1
BCD Semiconductor Manufacturing Limited
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005
Pin Configuration
T Package
(TO-220-3)
(TO-220-3(2))
3
2
1
Emitter
Collector
Base
3
2
1
Emitter
Collector
Base
TF Package
(TO-220F-3)
3
2
1
Emitter
Collector
Base
Figure 2. Pin Configuration of APT13005(front view)
Collector
Base
Emitter
Figure 3. Internal Structure of APT13005
Aug. 2010 Rev 1. 1
2
BCD Semiconductor Manufacturing Limited
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005
Ordering Information
APT13005
Circuit Type
Package
T: TO-220-3/TO-220-3(2)
TF: TO-220F-3
Package
TO-220-3/
TO-220-3(2)
TO-220F-3
Part Number
Lead Free
APT13005T-E1
APT13005TF-E1
-
E1: Lead Free
G1: Green
Blank: Tube
Marking ID
Green
APT13005T-G1
APT13005TF-G1
Lead Free
APT13005T-E1
APT13005TF-E1
Green
APT13005T-G1
APT13005TF-G1
Packing Type
Tube
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
D
"G1" suffix are available in green packages.
Absolute Maximum Ratings (Note 1)
D
DD D
Parameter
Collector-Emitter Voltage (V
BE
=0)
Collector-Emitter Voltage (I
B
=0)
Emitter-Base Breakdown Voltage (I
C
=0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Power Dissipation, T
C
=25
o
C
Operating Junction Temperature
Storage Temperature Range
TO-220-3/
TO-220-3 (2)
TO-220F-3
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
TOT
Value
700
450
9
4
8
2
4
75
28
150
-65 to 150
o
Unit
V
V
V
A
A
A
A
W
C
o
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Aug. 2010 Rev 1. 1
3
BCD Semiconductor Manufacturing Limited
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005
Thermal Characteristics
Parameter
Maximum Thermal Resistance
Symbol
θ
JC
Condition
Junction to Case
TO-220-3/
TO-220-3(2)
TO-220F-3
Value
1.67
4.5
Unit
o
C/W
Electrical Characteristics
( T
C
=25
o
C, unless otherwise specified.)
Parameter
Collector Cut-off Current
(V
BE
=-1.5V)
Collector-Emitter Sustaining
Voltage (I
B
=0) (Note 2)
Symbol
I
CEV
V
CEO
(sus)
Conditions
V
CE
=700V
I
C
=100µA
I
C
=1.0A, I
B
=0.2A
Collector-Emitter Saturation
Voltage
V
CE
(sat)
I
C
=2.0A, I
B
=0.5A
I
C
=4.0A, I
B
=1.0A
Base-Emitter Saturation
Voltage
DC Current Gain (Note 2)
Turn -on Time with Resistive Load
Storage Time with Resistive Load
Fall Time with Resistive Load
Output Capacitance
Current Gain Bandwidth Product
V
BE
(sat)
I
C
=1.0A, I
B
=0.2A
I
C
=2.0A, I
B
=0.5A
I
C
=1.0A, V
CE
=5.0V
I
C
=2.0A, V
CE
=5.0V
I
C
=2A, V
CC
=125V
I
BI
=0.4A, I
B2
=-0.4V
V
CB
=10V, f=0.1MHz
V
CE
=10V, I
C
=0.5A
4
45
15
8
450
0.3
0.6
0.9
1.1
V
1.3
35
35
0.8
4.5
0.9
µs
µs
µs
pF
MHz
V
Min
Typ
Max
10
Unit
µA
V
h
FE
ton
ts
tf
C
OB
f
T
Note 2: Pulse test for Pulse Width
≤
300µs, Duty Cycle
≤
2%.
Aug. 2010 Rev 1. 1
4
BCD Semiconductor Manufacturing Limited
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005
Typical Performance Characteristics
10
10
Collector Current I
C
(A)
Collector Current I
C
(A)
1
DC
1
DC
0.1
0.1
T
C
=25 C
0.01
1
10
100
1000
o
T
C
=25 C
0.01
1
10
100
1000
o
Collector-Emitter clamp Voltage V
CE
(V)
D
Collector-Emitter clamp Voltage V
CE
(V)
D
Figure 4. Safe Operating Areas
DD D
(TO-220-3/TO-220-3(2) Package)
Figure 5. Safe Operating Areas (TO-220F-3 Package)
125
4.5
I
B
=500mA
4.0
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100
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3.5
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I
B
=450mA
I
B
=400mA
I
B
=350mA
I
B
=300mA
I
B
=250mA
I
B
=200mA
I
B
=150mA
I
B
=100mA
Power Derating Factor(%)
Collector Current I
C
(A)
Α
3.0
2.5
2.0
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75
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1.5
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25
1.0
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ΑΑ
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I
B
=50mA
Α
ΑΑ
Α
Α
0.5
ΑΑ
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ΑΑΑ
ΑΑ
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0
0
25
50
75
100
125
o
150
175
200
0.0
0
ΑΑ
1
2
3
4
5
6
7
8
Case Temperature( C)
Collector-Emitter Voltage V
CE
(V)
Figure 6. Power Derating Curve
Figure 7. Static Characterstics
Aug. 2010 Rev 1. 1
5
BCD Semiconductor Manufacturing Limited
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