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DTD114EG-AL3-R

Description
NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
CategoryDiscrete semiconductor    The transistor   
File Size165KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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DTD114EG-AL3-R Overview

NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)

DTD114EG-AL3-R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)56
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
UNISONIC TECHNOLOGIES CO., LTD
DTD114E
NPN DIGITAL TRANSISTOR
(BUILT- IN BIAS RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
NPN SILICON TRANSISTOR
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
DTD114EL-AE3-R
DTD114EG-AE3-R
DTD114EL-AL3-R
DTD114EG-AL3-R
Package
SOT-23
SOT-323
Pin Assignment
1
2
3
G
I
O
G
I
O
Packing
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-043,C

DTD114EG-AL3-R Related Products

DTD114EG-AL3-R DTD114EG-AE3-R DTD114E_11
Description NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
Is it Rohs certified? conform to conform to -
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD -
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 -
Contacts 3 3 -
Reach Compliance Code compli compli -
ECCN code EAR99 EAR99 -
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 -
Maximum collector current (IC) 0.5 A 0.5 A -
Collector-emitter maximum voltage 50 V 50 V -
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR -
Minimum DC current gain (hFE) 56 56 -
JESD-30 code R-PDSO-G3 R-PDSO-G3 -
Number of components 1 1 -
Number of terminals 3 3 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type NPN NPN -
surface mount YES YES -
Terminal form GULL WING GULL WING -
Terminal location DUAL DUAL -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
Nominal transition frequency (fT) 200 MHz 200 MHz -
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