Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
General Description
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters. This
device is intended for use in medium voltage opera-
tion, and particularly, in high frequency circuits where
low switching losses and low noise are required.
MBR20H100C is available in TO-220F-3, TO-220-3
and TO-220-3 (2) packages.
MBR20H100C
Main Product Characteristics
I
F (AV)
V
RRM
T
J
V
F
(max)
2×10A
100V
175
o
C
0.64V
Features
·
·
·
·
·
·
Low Forward Voltage: 0.64V @
High Surge Capacity
175
o
C Operating Junction Temperature
20A Total (10A Each Diode Leg)
Guard-ring for Stress Protection
Pb-free Package
125
o
C
Mechanical Characteristics
·
·
·
Case: Epoxy, Molded
Epoxy Meets UL 94V-0 @ 0.125in.
Weight (Approximately):
2Grams (TO-220-3, TO-220-3 (2) and
TO-220F-3)
Finish: All External Surfaces Corrosion Resistant
and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260
o
C Maximum for 10 Seconds
·
·
·
Applications
·
·
·
Power Supply Output Rectification
Power Management
Instrumentation
TO-220F-3
TO-220-3 (Optional)
TO-220-3 (2)
Figure 1. Package Types of MBR20H100C
Mar. 2011 Rev. 1. 4
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BCD Semiconductor Manufacturing Limited
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Pin Configuration
T Package
(TO-220-3) (Optional)
(TO-220-3 (2))
MBR20H100C
3
2
1
A2
K
A1
3
2
1
A2
K
A1
TF Package
(TO-220F-3)
3
2
1
A2
K
A1
Figure 2. Pin Configuration of MBR20H100C (Top View)
A1
K
A2
Figure 3. Internal Structure of MBR20H100C
Mar. 2011 Rev. 1. 4
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BCD Semiconductor Manufacturing Limited
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Ordering Information
MBR20H100C
MBR20H100C
Circuit Type
Package
T: TO-220-3 (2)
TO-220-3 (Optional)
TF: TO-220F-3
-
E1: Lead Free
G1: Green
Blank: Tube
Package
Part Number
Lead Free
Marking ID
Green
MBR20H100CT-G1
Lead Free
MBR20H100CT-E1
Green
MBR20H100CT-G1
Packing
Type
Tube
Tube
TO-220-3 (2) MBR20H100CT-E1
TO-220F-3
MBR20H100CTF-E1 MBR20H100CTF-G1 MBR20H100CTF-E1 MBR20H100CTF-G1
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Mar. 2011 Rev. 1. 4
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BCD Semiconductor Manufacturing Limited
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Absolute Maximum Ratings (Each Diode Leg) (Note 1)
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
) T
C
=162
o
C
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20kHz) T
C
=160
o
C
Non Repetitive Peak Surge Current (Surge Applied at Rated load
Conditions Half Wave, Single Phase, 60Hz)
Operating Junction Temperature (Note 2)
Storage Temperature Range
Voltage Rate of Change (Rated V
R
)
ESD (Machine Model=C)
ESD (Human Body Model=3B)
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FRM
I
FSM
T
J
T
STG
dv/dt
Value
100
Unit
V
MBR20H100C
10
20
250
175
-65 to 175
10000
>400
>8000
A
A
A
o
C
o
C
V/µs
V
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dP
D
/dT
J
<1/θ
JA
.
Thermal Characteristics
Parameter
Symbol
Condition
Junction to Case
TO-220-3/
TO-220-3 (2)
TO-220F-3
Value
2.0
2.5
60
o
Unit
θ
JC
Maximum Thermal Resistance
C/W
θ
JA
Junction to Ambient
TO-220-3/
TO-220-3 (2)
Mar. 2011 Rev. 1. 4
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BCD Semiconductor Manufacturing Limited
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Electrical Characteristics (Each Diode Leg)
Parameter
Symbol
Condition
I
F
=10A, T
C
=25
o
C
Maximum Instantaneous Forward
Voltage Drop (Note 3)
V
F
I
F
=10A, T
C
=125
o
C
I
F
=20A, T
C
=25 C
I
F
=20A, T
C
=125
o
C
Maximum Instantaneous Reverse
Current (Note 3)
I
R
Rated DC Voltage, T
C
=125
o
C
Rated DC Voltage,
T
C
=25
o
C
o
MBR20H100C
Value
0.77
0.64
0.88
0.73
6.0
Unit
V
mA
0.0045
Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%.
Mar. 2011 Rev. 1. 4
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BCD Semiconductor Manufacturing Limited
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