, O
ne.
20
STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
IRF330-333/IRF730-733
MTM/MTP5N35/5N40
N-Channel Power MOSFETs,
5.5 A, 350 V/400 V
Power And Discrete Division
Description
These devices are n-channol, enhancement mode, power
MOSFETs designed especially for high voltage, high speed
applications, such as off-line switching power supplies,
UPS, AC and DC motor controls, relay and solenoid
drivers.
• V
QS
Rated at ±20 V
• Silicon Gate for Fast Switching Speeds
• "DSS. VDS(on). »w»
Temperature
'
Rua9ed
* VQS(lh) apecmi
IRF330
|RF331
TO-220AB
IRF730
|RF?31
IRF332
IRF333
MTM5N35
MTM5N4
°
IRF732
IRF733
MTP5N3S
MTPSN4
°
Maximum Ratings
Symbol
VDSS
VDOR
Characteristic
Drain to Source Voltage
Drain to Gate Voltage
Gate to Source Voltage
Operating Junction and
Storage Temperature
Maximum Lead Temperature
for Soldering Purposes,
1/8" From Case for 5 s
Rating
IRF330/332
IRF730/732
MTM/MTP5N40
400
400
±20
Rating
IRF331/333
IRF731/733
MTM/MTP5N36
350
350
±20
Unit
V
V
V
V
GS
Tj, T
slg
-55 to
+150
275
-55 to
+150
275
°c
TL
«c
Maximum On-State Characteristics
IRF330/331
IRF730/731
RDS (on)
IRF332/333
IRF732/733
1.5
MTM5N35/40
MTP5N35/40
1.0
Static Drain-to-Source
On Resistance
Drain Current
Continuous
Pulsed
1.0
n
A
ID
5.5
22
4.5
22
5.0
22
Maximum Thermal Characteristics
RSJC
Thermal Resistance,
Junction to Case
Total Power Dissipation
at T
c
= 25°C
1.67
1.67
1.67
°C/W
PD
75
75
75
W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRF330-333/IRF730-733
Electrical Characteristics
(Tc = 25°C unless otherwise noted)
Symbol
OH Characteristics
V(BR)DSS
Characteristic
Mln
Max
Unit
Test Conditions
Drain Source Breakdown Voltage
1
IRF330/332/730/732
IRF331/333/731/733
400
350
250
1000
V
VGS - 0 V, ID - 250 MA
loss
Zero Gate Voltage Drain Current
MA
MA
nA
VDS - Rated V
OS
s, V
GS
- 0 V
VDS - 0-8 x Rated VDSS.
V
GS
= 0 V, T
C
=125°C
IGSS
Gate-Body Leakage Current
IRF330-333
IRF730-733
Gate Threshold Voltage
Static Drain-Source On-Resistance
2
IRF330/331/730/731
IRF332/333/732/733
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
2.0
VQS = ±20 v, V
DS
= o v
±100
±500
On Characteristics
VQS(th)
RDS(on)
4.0
V
I
D
= 250 MA, V
DS
- VGS
VGS = 10 V, ID = 3.0 A
n
1.0
1.5
3.0
(to
Qss
s as)
900
300
BO
PF
PF
pF
ns
VDS = 10 v, I
D
= 3.0 A
Dynamic Characteristics
c
oss
c,
93
*d(on)
VDS - 25 V, VGS = 0 V
f-1.0 MHz
Switching Characteristics (Tc - 25'C,
Figures 12, 13)
30
35
55
35
30
V
tdfoff)
ns
ns
ns
nC
V
DD
=175 V, ID "3.0 A
VGS = 10 V, R
G
EN = 15 fi
R
GS
-15
fl
t[
Qg
Symbol
VGS -10 v, ID = 7.0 A
V
DD
= 180 V
Characteristic
Typ
Max
Unit
Test Conditions
Source-Drain Diode Characteristics
VSD
Diode Forward Voltage
IRF330/331/730/731
IRF332/333/732/733
400
1.6
1.5
V
V
ns
l
s
= 5.5 A; VGS = 0 V
l
s
= 4.5 A; VQS - 0 V
tn
Reverse Recovery Time
Is = 5.5 A; dl
s
/dt = 100 A/MS
MTM/MTP5N35/5N40
Electrical Characteristics
(Tc •=• 25°C unless otherwise noted)
Symbol
Off Characteristics
V(BH)DSS
Characteristic
Min
Max
Unit
Test Conditions
Drain Source Breakdown Voltage
1
MTM/MTP5N40
MTM/MTP5N35
V
V
QS
- 0 V, b - 5.0 mA
400
350
0.25
loss
Zero Gate Voltage Drain Current
mA
rtiA
nA
VDS = 0.85 x Rated V
DS
s,
V
GS
- o v
2.5
V
DS
= 0.85 x Rated V
D
ss.
VQS-O v, T
c
=ioo°c
V
ss
= ±20 V, VDS-O V
'ass
Vos(tn)
Gate-Body Leakage Current
±500
On Characteristics
Gate Threshold Voltage
2.0
1.5
4.5
4.0
1.0
V
V
ID
-1.0
mA, V
DS
= V
QS
I
D
= 1.0 mA, VDS = VGS
T
C
-100°C
V
GS
= 10 V, I
D
-2.5
A
V
QS
-10 V; I
D
-2.5
A
VGS -10 V, ID
-5.0
A
V
GS
-10 V, ID = 2.5 A
T
C
= 100°C
V
0
s=10 V, I
D
= 2.5 A
R
DS(on)
Static Drain-Source On-Resistance
2
Drain-Source On-Voltage
2
Q.
V
V
Vos(on)
2.5
6.2
5.0
V
S (U)
9ls
Forward Transconductance
2.0
Dynamic Characteristics
C
iss
GOSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1200
PF
PF
PF
300
80
VDS - 25 V, VQS = 0 V
( = 1.0 MHz
c
res
td(on)
Switching Characteristics (T
c
= 25°C, Figures 12, 13)
3
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
50
100
200
100
30
ns
V
td(o«)
tf
ns
ns
ns
nC
V
DD
= 25 V, I
D
= 2.5 A
VGS =10 V, R
QEN
= 50 n
R
GS
= 50 n
Qg
V
GS
=10 V, I
D
= 7.0 A
V
DD
-180 V
HotM
1. Tj-+25°C to +150'C
2. Pulse test: Pulsa width < 60 (is. Duty cycle < 1%
3. Switching time measurements performed on LEM TR-58 test equipment.
Electronics Design Contest
京公网安备 11010802033920号
EEWORLD
