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AP70T03GH

Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size72KB,4 Pages
ManufacturerADPOW
Websitehttp://www.advancedpower.com/
Download Datasheet View All

AP70T03GH Overview

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP70T03GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
Low Gate Charge
Fast Switching
RoHS Compliant
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
9mΩ
60A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP70T03GJ) are available for low-profile applications.
GD
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=100℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
60
43
195
53
0.36
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.8
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
200823053-1/4
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