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TS902C2

Description
10 A, 200 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size67KB,3 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
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TS902C2 Overview

10 A, 200 V, SILICON, RECTIFIER DIODE

TS902C2
(10A)
LOW LOSS SUPER HIGH SPEED RECTIFIER
( 200V / 10A )
Outline drawings, mm
10
+0.5
0.9
±0.3
4.5
±0.2
1.32
1.5 Max
9.3
±0.5
1.2
±0.2
5.08
0.8
—0.1
2.7
+0.2
0.4
+0.2
Features
Surface-mount device
Low V
F
Super high speed switching
High reliability by planer design
JEDEC
EIAJ
1. Gate
2, 4. Drain
3. Source
Connection diagram
Applications
High speed power switching
1
2
4
3
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
V
RRM
I
O
I
FSM
T
j
T
stg
Square wave, duty=1/2, Tc=125°C
Sine wave 10ms
Conditions
Rating
200
10*
50
-40 to +150
-40 to +150
Unit
V
A
A
°C
°C
*
Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Reverse recovery time
Thermal resistance
Symbol
V
FM
I
RRM
t
rr
R
th(j-c)
Conditions
I
FM
=5.0A
V
R
=V
RRM
I
F
=0.1A, I
R
=0.2A, I
rec
=0.05A
Junction to case
Max.
0.95
100
35
2.5*
Unit
V
µA
ns
°C/W
3.0
±0.3
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