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2N6668BU

Description
10A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size377KB,61 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

2N6668BU Overview

10A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

2N6668BU Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-220AB
package instructionTO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
2N6609
(See 2N3773)
Darlington Silicon
Power Transistors
. . . designed for general–purpose amplifier and low speed switching applications.
High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc
Collector–Emitter Sustaining Voltage — @ 200 mAdc
VCEO(sus) = 60 Vdc (Min) — 2N6667
VCEO(sus)
= 80 Vdc (Min) — 2N6668
Low Collector–Emitter Saturation Voltage — VCE(sat) = 2 Vdc (Max) @ IC = 5 Adc
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
TO–220AB Compact Package
Complementary to 2N6387, 2N6388
COLLECTOR
2N6667
2N6668
PNP SILICON
DARLINGTON
POWER TRANSISTORS
10 AMPERES
60 – 80 VOLTS
65 WATTS
BASE
[
8 k
[
120
CASE 221A–06
TO–220AB
EMITTER
Figure 1. Darlington Schematic
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MAXIMUM RATINGS (1)
Rating
Symbol
VCEO
VCB
VEB
IC
IB
2N6667
60
60
2N6668
80
80
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
5
Collector Current — Continuous
— Peak
Base Current
10
15
250
mAdc
watts
W/
_
C
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
Total Device Dissipation @ TA = 25
_
C
Derate above 25
_
C
PD
PD
65
0.52
2
0.016
Watts
W/
_
C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
θJC
R
θJA
Max
Unit
Thermal Resistance, Junction to Case
1.92
62.5
_
C/W
_
C/W
Thermal Resistance, Junction to Ambient
(1) Indicates JEDEC Registered Data.
REV 1
Motorola Bipolar Power Transistor Device Data
3–147

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