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2N3630E3

Description
Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size65KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

2N3630E3 Overview

Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN

2N3630E3 Parametric

Parameter NameAttribute value
Objectid8059220269
package instructionPOST/STUD MOUNT, O-MUPM-X3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-61
JESD-30 codeO-MUPM-X3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
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