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2SC2776VAUL

Description
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, MPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size48KB,3 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SC2776VAUL Overview

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, MPAK-3

2SC2776VAUL Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.03 A
Collector-based maximum capacity1.5 pF
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)320 MHz
Base Number Matches1

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