RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
| Parameter Name | Attribute value |
| package instruction | DISK BUTTON, O-CRDB-F4 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Shell connection | SOURCE |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 5 V |
| Maximum drain current (Abs) (ID) | 0.12 A |
| Maximum drain current (ID) | 0.12 A |
| FET technology | METAL SEMICONDUCTOR |
| highest frequency band | X BAND |
| JESD-30 code | O-CRDB-F4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | DEPLETION MODE |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND |
| Package form | DISK BUTTON |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 0.2 W |
| Minimum power gain (Gp) | 8 dB |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | RADIAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE |
| Base Number Matches | 1 |