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2SK780

Description
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size72KB,3 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SK780 Overview

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

2SK780 Parametric

Parameter NameAttribute value
package instructionDISK BUTTON, O-CRDB-F4
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage5 V
Maximum drain current (Abs) (ID)0.12 A
Maximum drain current (ID)0.12 A
FET technologyMETAL SEMICONDUCTOR
highest frequency bandX BAND
JESD-30 codeO-CRDB-F4
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Polarity/channel typeN-CHANNEL
Maximum power consumption environment0.2 W
Minimum power gain (Gp)8 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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