Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC643A
DESCRIPTION
・With
TO-3 package
・High
voltage,high reliability
・Low
collector saturation voltage
APPLICATIONS
・For
color TV horizontal output applications
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
・
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
固电
导½
半
ES
NG
Open emitter
Open base
Collector-base voltage
HA
INC
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector-emitter voltage
MIC
E
CONDITIONS
OR
UCT
ND
O
VALUE
1500
700
5
2.5
UNIT
V
V
V
A
W
℃
℃
Open collector
Collector power dissipation
T
C
=25℃
50
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC643A
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA; I
B
=0
700
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=1mA; I
C
=0
5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=2A; I
B
=0.6A
8.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=2A; I
B
=0.6A
1.5
V
μA
I
CBO
Collector cut-off current
V
CB
=500V;I
E
=0
10
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
100
μA
h
FE
DC current gain
f
T
固电
IN
Transition frequency
导½
半
I
C
=2A ; V
CE
=15V
5
I
C
=0.1A ; V
CE
=10V
ANG
CH
MIC
E SE
DUC
ON
2
OR
T
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC643A
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions
3
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