SILICON PIN DIODES
High voltage PIN diodes
SILICON PIN DIODES FOR SWITCHING & PHASE
SHIFTING APPLICATIONS (MEDIUM & HIGH POWER)
Description
This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa
technology. A broad range of products is available, in terms of breakdown voltages, junction
capacitances and series resistances, to suit a large variety of applications, from 1 MHz to several GHz.
These diodes are available in non-magnetic packages.
Electrical characteristics
CHIP DIODES
Characteristics
at 25°C
Chip
dimensions
Applicable
Break-
voltage down
V
R
V
BR
CHIP AND PACKAGED DIODES
Junction
Forward series
Minority
capacitance
resistance
carrier
Cj
(1)
R
SF
lifetime
τ
I
Test conditions
N/A
mm typ.
Gold dia per side
0.13
0.15
0.25
0.27
0.34
0.13
0.27
0.55
0.23
0.30
0.55
0.6
0.6
0.8
0.8
0.9
0.8
0.9
1.4
0.9
0.9
1.4
I < 10µA I < 10µA
V
min.
500
500
500
500
500
800
800
800
1000
1000
1000
V
typ.
550
550
550
550
550
850
850
850
1100
1100
1100
V
R
= 50 V
f = 1 MHz
pF
typ.
0.15
0.30
0.60
0.80
1.2
0.15
0.80
1.4
0.30
0.60
1.40
max
0.20
0.40
0.70
0.90
1.3
0.35
0.90
1.7
0.40
0.75
1.70
f = 120 MHz
I
F
AS SHOWN
MAX
I
F
= 10 mA
I
R
= 6mA
µ
S
min.
1.1
1.5
2.0
2.5
3.0
2.0
3.0
5.0
3.0
4.0
7.0
TYPE
PIN
EH80050
EH80051
EH80052
EH80053
EH80055
EH80080
EH80083
EH80086
EH80100
EH80102
EH80106
Ω
I
F
= 100 mA
0.70
0.60
0.40
0.30
0.25
0.80
0.40
0.35
0.70
0.40
0.35
I
F
= 200 mA
0.60
0.45
0.40
0.30
0.45
0.30
I
F
= 200 mA
0.60
0.35
0.50
0.35
0.20
I
F
= 200 mA
0.65
0.55
0.30
0.25
0.22
0.70
0.30
0.28
0.60
0.35
0.30
I
F
= 300 mA
0.55
0.35
0.30
0.25
0.35
0.25
I
F
= 300 mA
0.50
0.30
0.40
0.30
0.15
V
R
= 100V
EH80120
EH80124
EH80126
EH80129
EH80154
EH80159
0.25
0.65
0.75
1.25
0.65
1.25
0.9
1.5 H
(2)
1.7 H
(2)
2.2
1.5
2.2
1200
1200
1200
1200
1500
1500
1300
1300
1300
1300
1600
1600
0.30
1.00
1.40
2.00
1.00
2.00
0.40
1.20
1.70
2.30
1.20
2.30
6.0
10.0
12.0
15.0
10.0
15.0
V
R
= 200V
EH80182
EH80189
EH80204
EH80209
EH80210
(1)
(2)
12-18
Vol. 1
0.75
1.4
0.85
1.4
1.5
1.5
2.6 H
(2)
1.7
2.6 H
(2)
3 H
(2)
1800
1800
2000
2000
2000
1900
1900
2100
2100
2100
0.60
2.00
1.00
2.00
3.00
0.80
2.40
1.30
2.40
3.40
12.0
18.0
14.0
18.0
25.0
Other capacitance values available on request
Hexagonal chips (between opposite flats)
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
SILICON PIN DIODES
High voltage PIN diodes
PACKAGED DIODES
Thermal
resistance
R
TH
(4)
P
DISS
= 1 W
°C/W
PIN
DH80050
DH80051
DH80052
DH80053
DH80055
DH80080
DH80083
DH80086
DH80100
DH80102
DH80106
Shunt
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
BH35
F 27d
F 27d
BH35
Isolated stud
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH300
Flat mounted
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
max
20.0
18.0
15.0
12.0
10.0
18.0
12.0
8.0
15.0
12.0
5.5
Typical operating
conditions
VSWR < 1.5
Z0 = 50
Ω
Chip configuration
Frequency
50
30
20
20
10
50
20
10
20
20
10
MHz
- 20000
- 15000
- 10000
-
3000
-
1000
- 20000
- 10000
-
500
- 10000
- 3000
-
500
Power
W
50
80
100
100
250
60
80
200
80
100
500
Type
Standard case
(3)
DH80120
DH80124
DH80126
DH80129
DH80154
DH80159
F 27d
BH35
BH35
BH141
BH141
BH141
BH301
BH300
BH300
BH300
BH300
BH300
BH202
BH200
BH200
BH200
BH200
BH200
15.0
8.0
6.0
4.5
8.0
4.5
10
10
10
5
10
5
-
-
-
-
-
-
8000
2000
500
200
2000
200
100
250
500
1000
250
1000
DH80182
DH80189
DH80204
DH80209
DH80210
BH35
BH141
BH141
BH141
BH141
BH300
BH300
BH300
BH300
BH300
BH200
BH200
BH200
BH200
BH200
10
4.5
8.0
4.5
2.5
10
15
10
1.5
1.5
-
-
-
-
-
50
200
1000
200
50
1000
250
1000
1000
(3)Custom cases available on request (4) R
TH
is measured in a standard shunt case, grounded on an infinite heatsink
Temperature ranges:
Operating junction (T
j
): -55° C to +175° C
Storage: -65° C to +200° C
12-19
Vol. 1
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
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