Advanced Technical Information
DGS 3-03AS
I
FAV
= 5A
V
RRM
= 300 V
C
Junction
= 3.7 pF
Gallium Arsenide Schottky Rectifier
V
RSM
V
300
V
RRM
V
300
Type
Marking
on product
A
C
TO-252 AA
A
A
C (TAB)
DGS 3-03AS
3A030AS
A = Anode, C = Cathode , TAB = Cathode
Symbol
I
FAV
I
FAV
I
FSM
T
VJ
T
stg
P
tot
Conditions
T
C
= 25°C; DC
T
C
= 90°C; DC
T
VJ
= 45°C; t
p
= 10 ms (50 Hz); sine
Maximum Ratings
5
3.5
10
-55...+175
-55...+150
A
A
A
Features
●
●
●
●
°C
°C
●
●
T
C
= 25°C
18
W
●
Low forward voltage
Very high switching speed
Low junction capacity of GaAs
- low reverse current peak at turn off
Soft turn off
Temperature independent switching
behaviour
High temperature operation capability
Epoxy meets UL 94V-0
Applications
●
Symbol
I
R
V
F
C
J
R
thJC
Weight
①
Conditions
V
R
= V
RRM
;
V
R
= V
RRM
;
I
F
= 2 A;
I
F
= 2 A;
V
R
= 150 V;
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
Characteristic Values
typ.
max.
●
●
0.7
0.7
1.6
1.6
3.7
8.5
0.3
2
mA
mA
V
V
pF
K/W
g
●
MHz switched mode power supplies
(SMPS)
Small size SMPs
High frequency converters
Resonant converters
Pulse test:
①
Pulse Width = 5 ms, Duty Cycle < 2.0%
Data according to DIN/IEC 747 and per diode unless otherwise specified
IXYS reserve the right to change limits, conditions and dimensions.
© 2002 IXYS All rights reserved
1-2
241
Advanced Technical Information
DGS 3-03AS
10
100
pF
TO-252 AA
A
I
F
C
J
1
T
VJ
= 125°C
10
0,1
T
VJ
=
125°C
25°C
1 Anode
2 NC
3 Anode
4 Cathode
0,01
0,0
0,5
1,0
1,5
V
F
2,0 V 2,5
1
0,1
1
10
Fig. 1typ. forward characteristics
Fig. 2 typ. junction capacity
versus blocking voltage
100 V 1000
V
R
Dim.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
DGS 4-03AS
Millimeter
Min. Max.
2.19 2.38
0.89 1.14
0 0.13
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
Inches
Min.
Max.
0.086 0.094
0.035 0.045
0 0.005
0.025 0.035
0.030 0.045
0.205 0.215
0.018 0.023
0.018 0.023
0.235 0.245
0.170 0.205
0.250 0.265
0.170 0.205
0.090 BSC
0.180 BSC
0.370 0.410
0.020 0.040
0.025 0.040
0.035 0.050
0.100 0.115
10
K/W
1
Z
thJC
Single Pulse
0,1
0,01
0,00001
0,0001
0,001
0,01
0,1
1
t
s
10
Fig. 3 typ. thermal impedance junction to case
IXYS reserve the right to change limits, conditions and dimensions.
© 2002 IXYS All rights reserved
2-2
241
京公网安备 11010802033920号
EEWORLD
