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2N3176

Description
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size87KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

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Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin

2N3176 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1439171273
package instructionPOST/STUD MOUNT, O-MUPM-D3
Reach Compliance Codeunknown
ECCN codeEAR99
Samacsys ManufacturerMicrosemi Corporation
Samacsys Modified On2018-09-29 13:29:55
Maximum collector current (IC)5 A
Collector-emitter maximum voltage60 V
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-61
JESD-30 codeO-MUPM-D3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formSOLDER LUG
Terminal locationUPPER
Transistor component materialsSILICON
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