HMC406MS8G / 406MS8GE
v06.0611
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Typical Applications
The HmC406ms8G(e) is ideal for:
Features
Gain: 17 dB
saturated power: +29 dBm
38% pAe
supply Voltage: +5V
power Down Capability
low external part Count
Amplifiers - lineAr & power - smT
• WiMAX & WiLAN
• DSRC
• Military & Maritime
• Private Mobile Radio
• UNII & ISM
Functional Diagram
General Description
The HmC406ms8G(e) is a high efficiency GaAs
inGap Heterojunction Bipolar Transistor (HBT) mmiC
power amplifier which operates between 5 and 6
GHz. The amplifier is packaged in a low cost, surface
mount 8 leaded package with an exposed base
for improved rf and thermal performance. with
a minimum of external components, the amplifier
provides 17 dB of gain and +29 dBm of saturated
power at 38% pAe from a +5V supply voltage. Vpd
can be used for full power down or rf output power/
current control.
Electrical Specifications,
T
A
= +25° C, Vs = 5V, Vpd = 5V
parameter
frequency range
Gain
Gain Variation over Temperature
input return loss
output return loss
output power for 1 dB Compression (p1dB)
saturated output power (psat)
output Third order intercept (ip3)
noise figure
supply Current (icq)
Control Current (ipd)
switching speed
Vpd = 0V/5V
Vpd = 5V
ton, toff
34
21
13
min.
Typ.
5-6
16
0.03
10
8
24
27
38
6.0
0.002 / 300
7
35
34
24
21
0.04
14
max.
min.
Typ.
5.7 - 5.9
17
0.03
11
9
27
29
38
6.0
0.002 / 300
7
35
21
0.04
max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC406MS8G / 406MS8GE
v06.0611
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Broadband Gain & Return Loss
20
15
10
Gain vs. Temperature
22
18
16
5
0
-5
-10
-15
-20
-25
3
4
5
6
7
8
S21
S11
S22
GAIN (dB)
14
12
10
8
6
4
2
0
4.5
5
5.5
6
6.5
+25 C
+85 C
-40 C
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
Output Return Loss vs. Temperature
0
+25 C
+85 C
-40 C
-5
-10
-15
+25 C
+85 C
-40 C
-20
-10
-25
-30
4.5
5
5.5
6
6.5
-15
4.5
5
5.5
6
6.5
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature
34
Psat vs. Temperature
34
30
30
P1dB (dBm)
26
Psat (dBm)
26
22
+25 C
+85 C
-40 C
22
+25 C
+85 C
-40 C
18
18
14
4.5
5
5.5
6
6.5
14
4.5
5
5.5
6
6.5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - lineAr & power - smT
2
20
RETURN LOSS (dB)
RESPONSE (dB)
RETURN LOSS (dB)
HMC406MS8G / 406MS8GE
v06.0611
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Power Compression @ 5.8 GHz
42
Output IP3 vs. Temperature
44
39
Amplifiers - lineAr & power - smT
Pout (dBm), GAIN (dB), PAE (%)
36
30
34
IP3 (dBm)
24
18
12
6
0
0
2
4
6
8
10
12
14
16
18
Pout (dBm)
Gain (dB)
PAE (%)
29
+25 C
+85 C
-40 C
24
19
14
4.5
5
5.5
6
6.5
FREQUENCY (GHz)
INPUT POWER (dBm)
Noise Figure vs. Temperature
10
9
8
Gain & Power vs. Supply Voltage
24
23
22
21
32
31
30
29
28
27
26
25
P1dB
Psat
24
23
22
5
5.25
NOISE FIGURE (dB)
7
6
5
4
3
2
1
0
4.5
5
5.5
6
6.5
+25 C
+85 C
-40 C
P1dB, Psat (dBm)
GAIN dB)
20
19
18
17
16
15
14
4.75
Gain
FREQUENCY (GHz)
Vcc SUPPLY VOLTAGE (V)
Reverse Isolation vs. Temperature
0
-10
Reverse Isolation
Power Down Isolation
Gain, Power & Quiescent
Supply Current vs. Vpd @ 5.8 GHz
33
350
315
280
245
Icq
210
GAIN (dB), P1dB (dBm), Psat (dBm)
30
27
24
21
18
15
12
9
6
3
Gain
P1dB
Psat
ISOLATION (dB)
-20
Icq (mA)
-30
175
140
105
70
35
0
3
3.5
4
4.5
5
-40
-50
-60
4.5
5
5.5
6
6.5
2.5
FREQUENCY (GHz)
Vpd (V)
3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC406MS8G / 406MS8GE
v06.0611
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Control Voltage (Vpd)
rf input power (rfin)(Vs = Vpd = +5V)
Junction Temperature
Continuous pdiss (T = 85 °C)
(derate 32 mw/°C above 85 °C)
Thermal resistance
(junction to ground paddle)
storage Temperature
operating Temperature
+5.5V
+20 dBm
150 °C
2.1 w
31 °C/w
-65 to +150 °C
-40 to +85° C
Outline Drawing
noTes:
1. leADfrAme mATeriAl: Copper AlloY
2. Dimensions Are in inCHes [millimeTers]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
part number
HmC406ms8G
HmC406ms8Ge
package Body material
low stress injection molded plastic
roHs-compliant low stress injection molded plastic
lead finish
sn/pb solder
100% matte sn
msl rating
msl1
msl1
[1]
package marking
[3]
H406
XXXX
H406
XXXX
[2]
[1] max peak reflow temperature of 235 °C
[2] max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - lineAr & power - smT
4
+5.5V
eleCTrosTATiC sensiTiVe DeViCe
OBSERVE HANDLING PRECAUTIONS
HMC406MS8G / 406MS8GE
v06.0611
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Pin Descriptions
pin number
function
Description
interface schematic
Amplifiers - lineAr & power - smT
1
Vpd
power Control pin. for maximum power, this pin should be
connected to 5V. A higher voltage is not recommended. for
lower idle current, this voltage can be reduced.
2, 4, 7
GnD
Ground: Backside of package has exposed metal ground
slug that must be connected to ground thru a short path.
Vias under the device are required.
This pin is AC coupled
and matched to 50 ohms.
3
rfin
5, 6
RFOUT
rf output and bias for the output stage. The power supply
for the output device needs to be supplied to these pins.
8
Vcc
power supply voltage for the first amplifier stage. An
external bypass capacitor of 330 pf is required. This
capacitor should be placed as close to the devices as
possible.
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
DSP and ARM Processors
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