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ESDA6V1FU6RL

Description
200W, UNIDIRECTIONAL, 18 ELEMENT, SILICON, TVS DIODE, PLASTIC, SSOP-20
CategoryDiscrete semiconductor    diode   
File Size67KB,7 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric Compare View All

ESDA6V1FU6RL Overview

200W, UNIDIRECTIONAL, 18 ELEMENT, SILICON, TVS DIODE, PLASTIC, SSOP-20

ESDA6V1FU6RL Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
Parts packaging codeSSOP
package instructionPLASTIC, SSOP-20
Contacts20
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum breakdown voltage7.2 V
Minimum breakdown voltage6.1 V
ConfigurationCOMPLEX
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-G20
Maximum non-repetitive peak reverse power dissipation200 W
Number of components18
Number of terminals20
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Certification statusNot Qualified
surface mountYES
technologyAVALANCHE
Terminal formGULL WING
Terminal locationDUAL
®
ESDA6V1FUx
ESD PROTECTION MONOLITHIC
9-BIT WIDE TRANSIL
TM
ARRAY
Application Specific Discretes
A.S.D.
TM
MAIN APPLICATIONS
Where protection in ESD sensitive equipmentis re-
quired, such as :
- Computers
- Printers
- Communication systems
DESCRIPTION
The ESDA6V1FUx is a monolithic TRANSIL array
designed to provide a 9-bit wide undershoot and
overshoot clamping function in association with
ESD protection level of up to 25 kV.
The ESDA6V1FUx provides best efficiency when
using separated inputs and outputs, in the so
called 4-point structure.
FEATURES
9-bit wide undershoot and overshoot clamping
functions.
Breakdown voltage : V
BR
= 6.1V min.
Forward voltage V
F
= 1.25V max. @ I
F
=200mA
Low capacitance: C =130pF @ V
RM
=5.25V.
Low clamping voltage.
200W peak pulse power (8/20
µ
s).
BENEFITS
ESD protection of 25 kV, according to
MIL STD- Method 3015-6.
High integration.
Four points structure, avoiding all ESD effects
at the outputs.
COMPLIESWITHTHE FOLLOWINGSTANDARDS :
- ESDstandard:
. IEC1000-4-2
Level4
SSOP20
SO20
PIN-OUT CONFIGURATION
I1
I2
I3
I4
I5
GND
I6
I7
I8
I9
O1
O2
O3
O4
O5
GND
O6
O7
O8
O9
15kV (air discharge)
8kV
(contactdischarge)
- MIL STD 883C - Method 3015-6
C = 100 pF
R = 1500
V
P
= 25 kV
3 positive strikes and 3 negative strikes (F = 1 Hz)
- Human body test :
C = 150 pF
R = 150
V
P
= 4 kV
TRANSIL is a trademark of STMicroelectronics
November 1998 - Ed: 1
1/7

ESDA6V1FU6RL Related Products

ESDA6V1FU6RL ESDA6V1FU3 ESDA6V1FU3RL
Description 200W, UNIDIRECTIONAL, 18 ELEMENT, SILICON, TVS DIODE, PLASTIC, SSOP-20 200W, UNIDIRECTIONAL, 18 ELEMENT, SILICON, TVS DIODE, PLASTIC, SO-20 200W, UNIDIRECTIONAL, 18 ELEMENT, SILICON, TVS DIODE, PLASTIC, SO-20
Maker STMicroelectronics STMicroelectronics STMicroelectronics
Parts packaging code SSOP SOD SOD
package instruction PLASTIC, SSOP-20 R-PDSO-G20 PLASTIC, SO-20
Contacts 20 20 20
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Maximum breakdown voltage 7.2 V 7.2 V 7.2 V
Minimum breakdown voltage 6.1 V 6.1 V 6.1 V
Configuration COMPLEX COMPLEX COMPLEX
Diode component materials SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code R-PDSO-G20 R-PDSO-G20 R-PDSO-G20
Maximum non-repetitive peak reverse power dissipation 200 W 200 W 200 W
Number of components 18 18 18
Number of terminals 20 20 20
Maximum operating temperature 125 °C 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
technology AVALANCHE AVALANCHE AVALANCHE
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
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