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MA357

Description
Silicon epitaxial planer type
CategoryDiscrete semiconductor    diode   
File Size18KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

MA357 Overview

Silicon epitaxial planer type

MA357 Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage34 V
ConfigurationSINGLE
Diode Capacitance Tolerance2%
Minimum diode capacitance ratio11
Nominal diode capacitance31.65 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandULTRA HIGH FREQUENCY
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Variable Capacitance Diodes
MA111
MA357J
Silicon epitaxial planer type
For CATV tuner
INDICATES
CATHODE
Unit : mm
s
Features
q
q
0.4±0.15
1
2
Small series resistance r
D
0.4±0.15
1.7±0.1
2.5±0.2
0.45
–0.05
+0.1
s
Absolute Maximum Ratings
(Ta= 25˚C)
Parameter
Reverse voltage (DC)
Peak reverse voltage
Junction temperature
Storage temperature
* R
L
=10kΩ
Symbol
V
R
V
RM
*
T
j
T
stg
Rating
34
35
150
– 55 to +150
Unit
V
V
˚C
˚C
0.9±0.1
1 : Anode
2 : Cathode
S-Mini Type Package (Flat 2-pin)
Marking Symbol : 7K
s
Electrical Characteristics
(Ta= 25˚C)
Parameter
Reverse current (DC)
Symbol
I
R
C
D(0V)
*
2
C
D(2V)
Diode capacitance
C
D(25V)
C
D(10V)
C
D(17V)
Capacitance ratio
Diode capacitance deviation
Series resistance
C
D(2V)
/C
D(25V)
∆C
r
D
*
1
C
D (2V) (10V) (17V) (25V)
C
D
= 9pF, f= 470MHz
V
R
= 30V
V
R
= 0V, f= 1MHz
V
R
= 2V, f= 1MHz
V
R
= 25V, f= 1MHz
V
R
= 10V, f= 1MHz
V
R
= 17V, f= 1MHz
58.0
29.00
2.53
6.40
3.50
11.0
2.0
0.54
34.30
2.92
8.32
4.35
Condition
min
typ
max
10
Unit
nA
pF
pF
pF
pF
pF
%
Note 1. Rated input/output frequency : 470MHz
2. *
1
: r
D
measurement device : YHP MODEL 4191A RF IMPEDANCE ANALYZER
3. *
2
: Low Signal Level
s
Marking
7K
0.16
–0.06
+0.1
1.25±0.1
Large capacity variation ratio

MA357 Related Products

MA357 MA360J MA357J
Description Silicon epitaxial planer type Silicon epitaxial planer type Silicon epitaxial planer type
Maker Panasonic Panasonic Panasonic
package instruction R-PDSO-G2 R-PDSO-F2 R-PDSO-F2
Contacts 2 2 2
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Minimum breakdown voltage 34 V 30 V 34 V
Configuration SINGLE SINGLE SINGLE
Diode Capacitance Tolerance 2% 2% 2%
Minimum diode capacitance ratio 11 5.95 11
Nominal diode capacitance 31.65 pF 14.36 pF 58 pF
Diode component materials SILICON SILICON SILICON
Diode type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-30 code R-PDSO-G2 R-PDSO-F2 R-PDSO-F2
Number of components 1 1 1
Number of terminals 2 2 2
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING FLAT FLAT
Terminal location DUAL DUAL DUAL
frequency band ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY -
Maximum repetitive peak reverse voltage - 35 V 34 V
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