JMnic
Product Specification
Silicon PNP Power Transistors
2SB1429
DESCRIPTION
・With
TO-3PL package
・Complement
to type 2SD2155
APPLICATIONS
・Power
amplifier applications
・Recommend
for 100W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-180
-180
-5
-15
-1.5
150
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-50mA ;I
B
=0
I
C
=-8A ;I
B
=-0.8A
I
C
=-6A ; V
CE
=-5V
V
CB
=-180V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-6A ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
I
E
=0;f=1MHz;V
CB
=-10V
55
30
MIN
-180
2SB1429
TYP.
MAX
UNIT
V
-3.0
-1.5
-5
-5
160
V
V
μA
μA
10
340
MHz
pF
h
FE-1
classifications
R
55-10
O
80-160
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1429
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1429
4
京公网安备 11010802033920号
EEWORLD
