High Frequency FETs
2SK690
GaAs N-Channel MES FET
For UHF medium output power amplification
unit: mm
s
Features
2.6±0.1
M
ain
Di
sc te
on na
tin nc
ue e/
d
q
Large collector dissipation P
C
q
Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
45˚
0.4±0.08
4.5±0.1
1.6±0.2
1.5±0.1
0.4max.
s
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Symbol
Drain to Source voltage
Gate to Source voltage
Drain current
Gate current
V
DS
V
GS
I
D
I
G
10
Allowable power dissipation
Channel temperature
Storage temperature
P
D*
T
ch
T
stg
Operating ambient temperature
T
opr
*
PC board: Copper foil of the drain portion should have a area of 1cm
2
or
more and the board thickness should be 1.7mm.
Parameter
isc
Symbol
*1, 2
on
s
Electrical Characteristics
(Ta = 25°C)
Drain current
ce
I
DD
V
DS
= 5V, V
GS
= 0
an
Drain cut-off current
I
DSX
I
GSS
I
GDO
V
GSC
| Y
fs
|
P
out
PG
η
add
V
DS
= 10V, V
GS
=
−6V
V
DS
= 0, V
GS
=
−6V
Gate to Source leakage current
Gate to Drain current
V
DS
= 16V
Gate to Source cut-off voltage
Forward transfer admittance
Output power
Power gain
Additional efficiency
*1
V
DS
= 5V, I
DS
= 1mA
V
DS
= 5V, I
DS
= 50mA, f = 1kHz
V
DS
= 6V, I
DS
= 100mA
f = 940MHz, P
in
= 10dBm
I
DSS
rank classification
Rank
I
DSS
(mA)
P
150 to 280
Q
220 to 380
R
320 to 600
*2
Pulse measurement
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1.0
–0.2
+0.1
4.0
–0.20
0.5±0.08
1.5±0.1
0.4±0.04
3.0±0.15
2
Ratings
−6
Unit
V
V
A
3
1
0.6
1
1
mA
W
1: Gate
2: Source
3: Drain
EIAJ: SC-62
Mini-Power Type Package (3-pin)
marking
150
°C
°C
°C
−55
to +150
−35
to +85
Marking Symbol: M
Internal Connection
1kΩ
G
Zener Di
12V
S
tin
ue
Zener Di
8.2V
Conditions
min
150
typ
max
600
2
Unit
mA
mA
µA
µA
V
/D
350
Ma
int
en
50
500
−6
90
20
10
150
25
15
51
ms
dBm
dB
%
2.5±0.1
D
+0.25
1
High Frequency FETs
P
D
Ta
1.2
180
2SK690
I
D
V
DS
300
| Y
fs
|
V
GS
Forward transfer admittance |Y
fs
| (mS)
Ta=25˚C
V
DS
=5V
f=1kHz
Ta=25˚C
Allowable power dissipation P
D
(mW)
1.0
Copper foil of the drain portion
should have a area of 1cm
2
or more and the board
thickness should be 1.7mm.
150
250
Drain current I
D
(mA)
0.8
120
V
GS
=– 0.8V
200
0.6
90
– 0.9V
150
0
0
40
80
120
160
200
240
Ambient temperature Ta (˚C)
C
iss
, C
oss
, C
rss
V
DS
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) C
iss
,C
oss
,C
rss
(pF)
2.4
2.0
1.6
C
iss
20
Additional efficiency
η
add
(%)
V
GS
=–5V
f=1MHz
Ta=25˚C
1.2
C
oss
0.8
0.4
C
rss
0
1
3
10
30
100
20
Additional efficiency
η
add
(%)
Output power P
out
(dBm)
10
Ma
int
en
V
DS
=6V
I
DS
=100mA
f=940MHz
P
in
=10dBm
/D
30
isc
P
out
V
GS
on
tin
ue
Drain to source voltage V
DS
(V)
0
–10
–20
–30
0
–1
–2
–3
–4
Gate to source voltage V
GS
(V)
2
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0
0
1
2
3
4
5
6
0
–2.0
–1.5
–1.0 – 0.5
0
0.5
M
ain
Di
sc te
on na
tin nc
ue e/
d
– 1.0V
– 1.1V
– 1.2V
– 1.3V
0.4
60
100
0.2
30
50
1.0
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
P
out
P
in
η
add
P
in
40
60
Output power P
out
(dBm)
V
DS
=6V
I
DS
=100mA
30 f=940MHz
P
in
=10dBm
V
DS
=6V
I
DS
=100mA
50 f=940MHz
P
in
=10dBm
40
10
30
0
20
–10
10
–20
–30
–20
–10
0
10
20
30
0
–30
–20
–10
0
10
20
30
Input voltage P
in
(dBm)
Input voltage P
in
(dBm)
η
add
V
GS
60
50
V
DS
=6V
I
DS
=100mA
f=940MHz
P
in
=10dBm
an
ce
40
30
20
10
0
0
– 0.5 –1.0
–1.5
–2.0
–2.5
–3.0
Gate to source voltage V
GS
(V)
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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ain
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sc te
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