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BY206

Description
Rectifier Diode, 1 Element, 0.4A, 350V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size34KB,2 Pages
ManufacturerDIOTEC
Websitehttp://www.diotec.com/
Download Datasheet Parametric View All

BY206 Overview

Rectifier Diode, 1 Element, 0.4A, 350V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2

BY206 Parametric

Parameter NameAttribute value
MakerDIOTEC
Parts packaging codeDO-15
package instructionO-PALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current0.4 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage350 V
Maximum reverse recovery time1 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Diotec
Fast Silicon Rectifiers
BY206
Schnelle Silizium Gleichrichter
Nominal current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
400 mA
350 V
DO-15
0.4 g
Dimensions / Maße in mm
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings
Type
Typ
BY206
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
350
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM
[V]
400
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
A
= 50
/
C
f > 15Hz
T
A
= 25
/
C
T
A
= 25
/
C
I
FAV
I
FRM
I
FSM
i
2
t
400 mA
1
)
3 A
1
)
20 A
2 A
2
s
– 50...+150
/
C
– 50...+150
/
C
T
j
T
S
1
) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlußdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
Erstausgabe 09.04.99, letzte Änderung 20.04.99
1

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