Preliminary
Datasheet
RJK60S3DPP-E0
600V - 12A - SJ MOS FET
High Speed Power Switching
Features
Superjunction MOSFET
Low on-resistance
R
DS(on)
= 0.35
typ. (at I
D
= 6 A, V
GS
= 10 V, Ta = 25C)
High speed switching
t
f
= 21 ns typ. (at I
D
= 6 A, V
GS
= 10 V, R
L
= 50
,
Rg = 10
,
Ta = 25C
R07DS0637EJ0100
Rev.1.00
Apr 23, 2012
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25C
Tc = 100C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Value at Tc = 25C
Symbol
V
DSS
V
GSS
I
D Note1
I
D Note1
I
D (pulse)Note1
I
DR Note1
I
DR (pulse)Note1
Pch
ch-c
Tch
Tstg
Note2
Ratings
600
+30,
20
12.0
7.6
24
12
24
27.7
4.5
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
C/W
C
C
R07DS0637EJ0100 Rev.1.00
Apr 23, 2012
Page 1 of 6
RJK60S3DPP-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery
current
Body-drain diode reverse recovery
charge
Notes: 3. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
Rg
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
I
rr
Q
rr
Min
600
—
—
3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.35
0.87
2.5
710
1040
3.5
23
20
41
21
13
4.6
5.7
1.0
340
21
3.9
Max
—
1
±0.1
5
0.44
—
—
—
—
—
—
—
—
—
—
—
—
1.6
—
—
—
Unit
V
mA
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
A
C
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
= +30V,
20
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 6 A, V
GS
= 10 V
Note3
Ta = 150°C
Note3
I
D
= 6 A, V
GS
= 10 V
f = 1 MHz
V
DS
= 25 V, V
GS
= 0
V
DS
= 25 V
V
GS
= 0
f = 100 kHz
I
D
= 6 A
V
GS
= 10 V
R
L
= 50
Note3
Rg = 10
V
DD
= 480 V
V
GS
= 10 V
Note3
I
D
= 12 A
I
F
= 12 A, V
GS
= 0
Note3
I
F
= 12 A
V
GS
= 0
Note3
di
F
/dt = 100 A/s
R07DS0637EJ0100 Rev.1.00
Apr 23, 2012
Page 2 of 6
RJK60S3DPP-E0
Preliminary
Main Characteristics
Channel Dissipation vs.
Case Temperature
40
20
Ta = 25°C
Pulse Test
Typical Output Characteristics
Channel Dissipation Pch (W)
I
D
(A)
30
16
8V
10 V
15 V
7V
12
20
Drain Current
8
6.5 V
6V
10
4
V
GS
= 5.5 V
0
0
25
50
75
100 125 150 175
0
0
2
4
6
8
10
Case Temperature Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
12
10
8
6
4
2
0
Ta = 125°C
Pulse Test
100
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
Drain Current I
D
(A)
8V
10 V
V
15
7V
6.5 V
10
Drain Current
6V
1
Tc = 75°C
25°C
5.5 V
V
GS
= 5 V
0.1
−25°C
0.01
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage V
GS
(V)
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
1.6
V
GS
= 10 V
Pulse Test
1.2
I
D
= 12 A
0.8
3A
0.4
6A
Ta = 125°C
1
25°C
0.1
1
10
V
GS
= 10 V
Pulse Test
100
0
−25
0
25
50
75
100 125 150
Drain Current
I
D
(A)
Case Temperature
Tc (°C)
R07DS0637EJ0100 Rev.1.00
Apr 23, 2012
Page 3 of 6
RJK60S3DPP-E0
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
1000
10000
Ta = 25°C
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
1000
Ciss
100
Coss
10
Crss
V
GS
= 0, f = 100 kHz
0
50
100
150
200
250
300
100
di/dt = 100 A/μs
V
GS
= 0, Ta = 25°C
10
1
10
100
1
0.1
Reverse Drain Current I
DR
(A)
Drain to Source Voltage
V
DS
(V)
C
OSS
Stored Energy (Typical)
V
DS
(V)
2.0
Dynamic Input Characteristics (Typical)
V
GS
1.6
600
V
DS
400
Drain to Source Voltage
1.2
8
0.8
0.4
200
V
DD
= 480 V
300 V
100 V
8
16
4
I
D
= 12 A
Ta = 25°C
24
32
0
0
50
100
150
200
250
300
0
0
0
Drain to Source Voltage
V
DS
(V)
Gate Charge
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
100
6
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
I
DR
(A)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
5
4
3
2
1
V
DS
= 10 V
0
−25
0
25
1 mA
I
D
= 10 mA
Ta = 125°C
10
25°C
Reverse Drain Current
0.1 mA
1
V
GS
= 0
Pulse Test
0.1
0
0.4
0.8
1.2
1.6
50
75
100 125 150
Source to Drain Voltage
V
SD
(V)
Case Temperature
Tc (°C)
R07DS0637EJ0100 Rev.1.00
Apr 23, 2012
Page 4 of 6
Gate to Source Voltage
E
OSS
(μJ)
V
DD
= 480 V
300 V
100 V
12
V
GS
(V)
800
16
RJK60S3DPP-E0
Drain to Source Breakdown Voltage
vs. Case Temperature (Typical)
Preliminary
Drain to Source Breakdown Voltage
V
(BR)DSS
(V)
800
700
600
500
I
D
= 10 mA
V
GS
= 0
400
−25
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 300 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0637EJ0100 Rev.1.00
Apr 23, 2012
Page 5 of 6
京公网安备 11010802033920号
EEWORLD
