TIL119
NON BASE LEAD
OPTICALLY COUPLED ISOLATOR
PHOTODARLINGTON OUTPUT
APPROVALS
l
2.54
6.9
6.1
8.9
max.
1
2
3
Dimensions in mm
6
5
4
8.3 max.
5.3
max.
2.54
min.
15°
max.
UL recognised, File No. E91231
DESCRIPTION
The TIL119 is an optically coupled isolator
consisting of an infrared light emitting diode
and NPN silicon photodarlington in a standard
6pin dual in line plastic package with the base
pin unconnected.
1.4
0.9
0.48
0.25
FEATURES
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l
High Current Transfer Ratio
l
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
l
Basepin unconnected for improved noise
immunity in high EMI environment
l
High sensitivity to low input drive current
l
Custom electrical selections available
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
30V
5V
150mW
60mA
5V
120mW
APPLICATIONS
l
Computer terminals
l
Industrial systems controllers
l
Measuring instruments
l
Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
8.3 max
1.2
0.6
10.2
9.5
1.4
0.9
0.26
10.16
Total Power Dissipation
250mW
(derate linearly 3.3mW/°C above 25°C)
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92287-AAS/A2
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
Collector-emitter Breakdown (BV
CEO
)
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
MIN TYP MAX UNITS
1.2
3
10
30
5
100
1.5
V
V
µ
A
V
V
n
Α
TEST CONDITION
I
F
= 10mA
I
R
= 10
µ
A
V
R
= 3V
I
C
= 1mA (note 2)
I
E
= 100
µ
A
V
CE
= 10V
Output
Coupled
Output Collector Current ( I
C
)(Note 2
)
Collector-emitter Saturation VoltageV
CE(SAT)
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
30
1.0
5300
7500
10
11
mA
V
V
RMS
V
PK
Ω
10mA I
F
, 1V V
CE
10mA I
F
, 30mA I
C
(note 1)
(note 1)
V
IO
= 500V (note 1)
Output Rise Time
Output Fall Time
tr
tf
300
300
µ
s
µ
s
V
CC
=10V,I
C (on)
=2.5mA,
R
L
= 100
Ω
, fig.1
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
FIGURE 1
V
CC
= 10V
Input
100
Ω
t
on
t
r
Input
Output
Output
10%
90%
10%
90%
t
off
t
f
7/12/00
DB92287-AAS/A2
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Current transfer ratio CTR (%)
10000
4000
150
1000
400
100
40
20
10
Current Transfer Ratio vs.
Forward Current
100
50
V
CE
= 1V
T
A
= 25°C
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
80
0
0.1 0.2 0.5
1
2
5
10 20 50 100
Forward current I
F
(mA)
Collector Current vs. Collector-emitter Voltage
100
5mA
T
A
= 25°C
70
Forward current I
F
(mA)
60
50
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
7/12/00
Collector current I
C
(mA)
80
2mA
60
40
20
I
F
= 1mA
0
0
1
2
3
4
5
Collector-emitter voltage V
CE
( V )
Normalized Current Transfer
Ratio vs. Ambient Temperature
1.5
Collector-emitter saturation voltage V
CE(SAT)
(V)
I
F
= 10mA
I
C
= 30mA
Normalized current transfer ratio
I
F
= 10mA
V
CE
= 1V
1.0
0.5
0
-30
0
25
50
75
Ambient temperature T
A
( °C )
100
DB92287-AAS/A2
FPGA/CPLD
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