16Mb: 1 MEG x16
EDO DRAM
EDO DRAM
MT4C1M16E5 – 1 Meg x 16, 5V
MT4LC1M16E5 – 1 Meg x 16, 3.3V
For the latest data sheet, please refer to the Micron Web
site:
www.micron.com/products/datasheets/sdramds.html
FEATURES
• JEDEC- and industry-standard x16 timing,
functions, pinouts, and packages
• High-performance CMOS silicon-gate process
• Single power supply (+3.3V ±0.3V or 5V ±10%)
• All inputs, outputs and clocks are TTL-compatible
• Refresh modes: RAS#-ONLY, CAS#-BEFORE-RAS#
(CBR), HIDDEN; optional self refresh (S)
• BYTE WRITE access cycles
• 1,024-cycle refresh (10 row, 10 column addresses)
• Extended Data-Out (EDO) PAGE MODE access
• 5V-tolerant inputs and I/Os on 3.3V devices
PIN ASSIGNMENT (Top View)
44/50-Pin TSOP
V
CC
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
NC
1
2
3
4
5
6
7
8
9
10
11
50
49
48
47
46
45
44
43
42
41
40
V
SS
DQ15
DQ14
DQ13
DQ12
V
SS
DQ11
DQ10
DQ9
DQ8
NC
42-Pin SOJ
V
CC
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
NC
NC
WE#
RAS#
NC
NC
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
V
SS
DQ15
DQ14
DQ13
DQ12
V
SS
DQ11
DQ10
DQ9
DQ8
NC
CASL#
CASH#
OE#
A9
A8
A7
A6
A5
A4
V
SS
OPTIONS
•
Voltages
1
3.3V
5V
• Refresh Addressing
1,024 (1K) rows
• Packages
Plastic SOJ (400 mil)
Plastic TSOP (400 mil)
• Timing
50ns access
60ns access
• Refresh Rates
Standard Refresh (16ms period)
Self Refresh (128ms period)
• Operating Temperature Range
Commercial (0
o
C to +70
o
C)
Extended (-20
o
C to +80
o
C)
Part Number Example:
MARKING
LC
C
E5
DJ
TG
-5
-6
None
S
2
None
ET
NC
NC
WE#
RAS#
NC
NC
A0
A1
A2
A3
V
CC
15
16
17
18
19
20
21
22
23
24
25
36
35
34
33
32
31
30
29
28
27
26
NC
CASL#
CASH#
OE#
A9
A8
A7
A6
A5
A4
V
SS
NOTE:
The "#" symbol indicates signal is active LOW.
1 MEG x 16 EDO DRAM PART NUMBERS
PART NUMBER
MT4LC1M16E5DJ-x
MT4LC1M16E5DJ-x S
MT4LC1M16E5TG-x
MT4LC1M16E5TG-x S
MT4C1M16E5DJ-x
MT4C1M16E5TG-x
Vcc REFRESH PACKAGE REFRESH
3.3V
1K
400-SOJ Standard
3.3V
1K
400-SOJ
Self
3.3V
1K
400-TSOP Standard
3.3V
1K
400-TSOP
Self
5V
1K
400-SOJ Standard
5V
1K
400-TSOP Standard
NOTE:
“-x” indicates speed grade marking under timing
options.
MT4LC1M16E5TG-6
NOTE:
1. The third field distinguishes the low voltage offering: LC desig-
nates Vcc = 3.3V and C designates Vcc = 5V.
2. Available only on MT4LC1M16E5 (3.3V)
GENERAL DESCRIPTION
The 1 Meg x 16 is a randomly accessed, solid-state
memory containing 16,777,216 bits organized in a x16
configuration. The 1 Meg x 16 has both BYTE WRITE
and WORD WRITE access cycles via two CAS# pins
(CASL# and CASH#). These function like a single CAS#
found on other DRAMs in that either CASL# or CASH#
will generate an internal CAS#.
The CAS# function and timing are determined by
the first CAS# (CASL# or CASH#) to transition LOW and
the last CAS# to transition back HIGH. Using only one
KEY TIMING PARAMETERS
SPEED
-5
-6
t
RC
t
RAC
t
PC
t
AA
t
CAC
t
CAS
84ns
104ns
50ns
60ns
20ns
25ns
25ns
30ns
15ns
17ns
8ns
10ns
1 Meg x 16 EDO DRAM
D52_B.p65 – Rev. B; Pub. 3/01
1
©2001, Micron Technology, Inc
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
16Mb: 1 MEG x16
EDO DRAM
GENERAL DESCRIPTION (continued)
of the two signals results in a BYTE WRITE cycle. CASL#
transitioning LOW selects an access cycle for the lower
byte (DQ0-DQ7), and CASH# transitioning LOW se-
lects an access cycle for the upper byte (DQ8-DQ15).
Each bit is uniquely addressed through the 20 ad-
dress bits during READ or WRITE cycles. These are
entered 10 bits (A0-A9) at a time. RAS# is used to latch
the first 10 bits and CAS#, the latter 10 bits. The CAS#
function also determines whether the cycle will be a
refresh cycle (RAS# ONLY) or an active cycle (READ,
WRITE or READ-WRITE) once RAS# goes LOW.
The CASL# and CASH# inputs internally generate a
CAS# signal that functions like the single CAS# input
on other DRAMs. The key difference is each CAS# input
(CASL# and CASH#) controls its corresponding eight
DQ inputs during WRITE accesses. CASL# controls
DQ0-DQ7, and CASH# controls DQ8-DQ15. The two
CAS# controls give the 1 Meg x 16 both BYTE READ and
BYTE WRITE cycle capabilities.
A logic HIGH on WE# dictates read mode, while a
logic LOW on WE# dictates write mode. During a WRITE
cycle, data-in (D) is latched by the falling edge of WE or
CAS# (CASL# or CASH#), whichever occurs last. An
EARLY WRITE occurs when WE is taken LOW prior to
either CAS# falling. A LATE WRITE or READ-MODIFY-
WRITE occurs when WE falls after CAS# (CASL# or
CASH#) was taken LOW. During EARLY WRITE cycles,
the data outputs (Q) will remain High-Z, regardless of
the state of OE#. During LATE WRITE or READ-
MODIFY-WRITE cycles, OE# must be taken HIGH to
disable the data outputs prior to applying input data.
If a LATE WRITE or READ-MODIFY-WRITE is attempted
while keeping OE# LOW, no WRITE will occur, and the
data outputs will drive read data from the accessed
location.
The 16 data inputs and 16 data outputs are routed
through 16 pins using common I/O. Pin direction is
controlled by OE# and WE#.
The 1 Meg x 16 DRAM must be refreshed periodi-
cally in order to retain stored data.
RAS#
V IH
V IL
CASL#/CASH#
V IH
V IL
ADDR
V IH
V IL
ROW
COLUMN (A)
COLUMN (B)
COLUMN (C)
COLUMN (D)
DQ V IOH
V IOL
OPEN
VALID DATA (A)
tOD
tOES
VALID DATA (A)
VALID DATA (B)
tOD
tOEHC
VALID DATA (C)
tOD
VALID DATA (D)
OE#
V IH
V IL
tOE
tOEP
The DQs go back to
Low-Z if
t
OES is met.
The DQs remain High-Z
until the next CAS# cycle
if
t
OEHC is met.
The DQs remain High-Z
until the next CAS# cycle
if
t
OEP is met.
DON’T CARE
UNDEFINED
Figure 1
OE# Control of DQs
1 Meg x 16 EDO DRAM
D52_B.p65 – Rev. B; Pub. 3/01
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc
16Mb: 1 MEG x16
EDO DRAM
PAGE ACCESS
Page operations allow faster data operations (READ,
WRITE or READ-MODIFY-WRITE) within a row-
address-defined page boundary. The page cycle is al-
ways initiated with a row address strobed in by RAS#,
followed by a column address strobed in by CAS#. Ad-
ditional columns may be accessed by providing valid
column addresses, strobing CAS# and holding RAS#
LOW, thus executing faster memory cycles. Returning
RAS# HIGH terminates the page mode of operation,
i.e., closes the page.
while RAS# remains LOW, data will transition to and
remain High-Z (refer to Figure 1). WE# can also perform
the function of disabling the output drivers under cer-
tain conditions, as shown in Figure 2.
During an application, if the DQ outputs are wire
OR’d, OE# must be used to disable idle banks of DRAMs.
Alternatively, pulsing WE# to the idle banks during
CAS# HIGH time will also High-Z the outputs. Inde-
pendent of OE# control, the outputs will disable after
t
OFF, which is referenced from the rising edge of RAS#
or CAS#, whichever occurs last.
EDO PAGE MODE
The 1 Meg x 16 provides EDO PAGE MODE, which is
an accelerated FAST-PAGE-MODE cycle. The primary
advantage of EDO is the availability of data-out even
after CAS# returns HIGH. EDO provides for CAS#
precharge time (
t
CP) to occur without the output data
going invalid. This elimination of CAS# output control
provides for pipelined READs.
FAST-PAGE-MODE DRAMs have traditionally
turned the output buffers off (High-Z) with the rising
edge of CAS#. EDO-PAGE-MODE DRAMs operate like
FAST-PAGE-MODE DRAMs, except data will remain
valid or become valid after CAS# goes HIGH during
READs, provided RAS# and OE# are held LOW. If OE# is
pulsed while RAS# and CAS# are LOW, data will toggle
from valid data to High-Z and back to the same valid
data. If OE# is toggled or pulsed after CAS# goes HIGH
BYTE ACCESS CYCLE
The BYTE WRITEs and BYTE READs are determined
by the use of CASL# and CASH#. Enabling CASL# se-
lects a lower BYTE access (DQ0-DQ7). Enabling CASH#
selects an upper BYTE access (DQ8-DQ15). Enabling
both CASL# and CASH# selects a WORD WRITE cycle.
The 1 Meg x 16 may be viewed as two 1 Meg x 8
DRAMs that have common input controls, with the ex-
ception of the CAS# inputs. Figure 3 illustrates the BYTE
WRITE and WORD WRITE cycles.
Additionally, both bytes must always be of the same
mode of operation if both bytes are active. A CAS#
precharge must be satisfied prior to changing modes of
operation between the upper and lower bytes. For ex-
ample, an EARLY WRITE on one byte and a LATE WRITE
on the other byte are not allowed during the same cycle.
RAS#
V IH
V IL
CASL#/CASH#
V IH
V IL
ADDR
V IH
V IL
ROW
COLUMN (A)
COLUMN (B)
COLUMN (C)
COLUMN (D)
DQ V IOH
V IOL
OPEN
VALID DATA (A)
tWHZ
VALID DATA (B)
tWHZ
INPUT DATA (C)
WE#
V IH
V IL
V IH
V IL
tWPZ
OE#
The DQs go to High-Z if WE# falls, and if
t
WPZ is met,
will remain High-Z until CAS# goes LOW with
WE# HIGH (i.e., until a READ cycle is initiated).
WE# may be used to disable the DQs to prepare
for input data in an EARLY WRITE cycle. The DQs
will remain High-Z until CAS# goes LOW with
WE# HIGH (i.e., until a READ cycle is initiated).
DON‘T CARE
UNDEFINED
Figure 2
WE# Control of DQs
1 Meg x 16 EDO DRAM
D52_B.p65 – Rev. B; Pub. 3/01
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc
16Mb: 1 MEG x16
EDO DRAM
However, an EARLY WRITE on one byte and a LATE
WRITE on the other byte, after a CAS# precharge has
been satisfied, are permissible.
distributed CBR REFRESH. This refresh rate can be
applied during normal operation, as well as during a
standby or battery backup mode.
The self refresh mode is terminated by driving
RAS# HIGH for a minimum time of
t
RPS. This delay
allows for the completion of any internal refresh cycles
that may be in process at the time of the RAS# LOW-to-
HIGH transition. If the DRAM controller uses a distrib-
uted refresh sequence, a burst refresh is not required
upon exiting self refresh. However, if the DRAM con-
troller utilizes a RAS#-ONLY or burst refresh sequence,
all 1,024 rows must be refreshed within the average
internal refresh rate, prior to the resumption of normal
operation.
DRAM REFRESH
Preserve correct memory cell data by maintaining
power and executing any RAS# cycle (READ, WRITE) or
RAS# REFRESH cycle (RAS#-ONLY, CBR or HIDDEN)
so that all 1,024 combinations of RAS# addresses are
executed within
t
REF (MAX), regardless of sequence.
The CBR, EXTENDED and SELF REFRESH cycles will
invoke the internal refresh counter for automatic RAS#
addressing.
An optional self refresh mode is available on the “S”
version. The self refresh feature is initiated by per-
forming a CBR REFRESH cycle and holding RAS# LOW
for the specified
t
RASS. The “S” option allows the user
the choice of a fully static, low-power data retention
mode or a dynamic refresh mode at the extended re-
fresh period of 128ms, or 125µs per row, when using a
WORD WRITE
RAS#
STANDBY
Returning RAS# and CAS# HIGH terminates a
memory cycle and decreases chip current to a reduced
standby level. The chip is preconditioned for the next
cycle during the RAS# HIGH time.
LOWER BYTE WRITE
CASL#
CASH#
WE#
LOWER BYTE
(DQ0-DQ7)
OF WORD
STORED
DATA
1
1
0
1
1
1
1
1
INPUT
DATA
0
0
1
0
0
0
0
0
INPUT
DATA
STORED
DATA
0
0
1
0
0
0
0
0
STORED
DATA
0
0
1
0
0
0
0
0
INPUT
DATA
1
1
0
1
1
1
1
1
INPUT
DATA
STORED
DATA
1
1
0
1
1
1
1
1
UPPER BYTE
(DQ8-DQ15)
OF WORD
0
1
0
1
0
0
0
0
X
X
X
X
X
X
X
X
ADDRESS 0
1
0
1
0
1
1
1
1
1
0
1
0
1
1
1
1
1
0
1
0
1
1
1
1
X
X
X
X
X
X
X
X
ADDRESS 1
1
0
1
0
1
1
1
1
X = NOT EFFECTIVE (DON'T CARE)
Figure 3
WORD and BYTE WRITE Example
1 Meg x 16 EDO DRAM
D52_B.p65 – Rev. B; Pub. 3/01
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc
16Mb: 1 MEG x16
EDO DRAM
FUNCTIONAL BLOCK DIAGRAM
WE#
CASL#
CASH#
DQ0
16
NO. 2 CLOCK
GENERATOR
DATA-OUT
BUFFER
10
CAS#
DATA-IN BUFFER
DQ15
10
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
10
COLUMN-
ADDRESS
BUFFER
REFRESH
CONTROLLER
COLUMN
DECODER
16
1,024
OE#
16
SENSE AMPLIFIERS
I/O GATING
REFRESH
COUNTER
10
ROW
DECODER
1,024 x 16
ROW-
ADDRESS
BUFFERS (10)
10
1,024
1,024 x 1,024 x 16
MEMORY
ARRAY
RAS#
NO. 1 CLOCK
GENERATOR
V
DD
V
SS
1 Meg x 16 EDO DRAM
D52_B.p65 – Rev. B; Pub. 3/01
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc
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