Trench Gate
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
TO-247 (IXTH)
IXTA102N15T
IXTH102N15T
IXTP102N15T
IXTQ102N15T
TO-220 (IXTP)
V
DSS
I
D25
R
DS(on)
= 150V
= 102A
≤
18mΩ
Ω
TO-3P (IXTQ)
G
S
(TAB)
G
D
S
(TAB)
G
D S
(TAB)
G
D
S
(TAB)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
LRMS
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
Lead Current Limit, RMS
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
175°C
T
C
= 25°C
Maximum Ratings
150
150
±
20
±
30
102
75
300
51
750
10
455
-55 ... +175
175
-55 ... +175
V
V
V
V
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
°C
Nmlb.in.
N/lb.
g
g
g
g
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
G = Gate
S = Source
D = Drain
TAB = Drain
Features
International Standard Packages
Avalanche Rated
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque
Mounting Force
TO-263
TO-220
TO-3P
TO-247
(TO-220, TO-3P, TO-247)
(TO-263)
300
260
1.13 / 10
2.5
3.0
5.5
6.0
Characteristic Values
Min.
Typ.
Max.
150
2.5
5.0
10..65/2.2..14.6
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 150°C
V
V
±
200 nA
5
μA
250
μA
18 mΩ
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2009 IXYS CORPORATION, All Rights Reserved
DS99661C(04/09)
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCH
(TO-220)
(TO-3P & TO-247)
0.50
0.25
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 25A
Resistive
Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3.3Ω
(External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min. Typ.
Max.
50
80
5220
685
95
20
14
25
22
87
23
31
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.33
°C/W
°C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 100A, V
GS
= 0V, Note 1
I
F
= 51A, -di/dt = 100A/μs
V
R
= 75V, V
GS
= 0V
97
8.4
409
Characteristic Values
Min.
Typ.
Max.
102
400
1.3
A
A
V
ns
A
nC
Note 1:
Pulse test, t
≤
300μs; duty cycle, d
≤
2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
TO-263 (IXTA) Outline
TO-247 (IXTH) Outline
∅
P
1
2
3
e
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A
1
2.2
2.54
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-220 (IXTP) Outline
TO-3P (IXTQ) Outline
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
© 2009 IXYS CORPORATION, All Rights Reserved
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Fig. 1. Output Characteristics
@ 25ºC
110
100
90
80
V
GS
= 15V
10V
9V
8V
7V
300
V
GS
= 15V
10V
9V
Fig. 2. Extended Output Characteristics
@ 25ºC
250
I
D
- Amperes
I
D
- Amperes
70
60
50
40
30
20
10
0
0.0
0.2
0.4
0.6
0.8
1.0
200
8V
150
7V
100
6V
50
6V
0
1.2
1.4
1.6
0
2
4
6
8
10
12
14
16
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 150ºC
110
100
90
80
V
GS
= 15V
10V
9V
8V
3.0
2.6
7V
2.2
Fig. 4. R
DS(on)
Normalized to I
D
= 51A Value
vs. Junction Temperature
V
GS
= 10V
I
D
- Amperes
70
60
50
40
30
20
10
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
5V
6V
R
DS(on)
- Normalized
I
D
= 102A
1.8
1.4
1.0
0.6
0.2
-50
-25
0
25
50
75
100
125
150
175
I
D
= 51A
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 51A Value
vs. Drain Current
5.0
4.5
4.0
V
GS
= 10V
T
J
= 175ºC
60
80
70
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit
R
DS(on)
- Normalized
3.0
2.5
2.0
1.5
1.0
0.5
0
40
80
120
160
200
240
280
T
J
= 25ºC
I
D
- Amperes
3.5
50
40
30
20
10
0
-50
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Fig. 7. Input Admittance
160
140
120
100
80
60
40
20
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
T
J
= 150ºC
25ºC
- 40ºC
120
110
100
90
T
J
= - 40ºC
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
80
70
60
50
40
30
20
10
0
0
20
40
60
25ºC
150ºC
80
100
120
140
160
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
300
275
250
225
10
9
8
7
V
DS
= 75V
I
D
= 51A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
200
175
150
125
100
75
50
25
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
T
J
= 150ºC
T
J
= 25ºC
V
GS
- Volts
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
80
90
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
1000.0
Fig. 12. Forward-Bias Safe Operating Area
Capacitance - PicoFarads
Ciss
100.0
R
DS(on)
Limit
25µs
100µs
Coss
I
D
- Amperes
1,000
10.0
1ms
100
Crss
1.0
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
0.1
0
5
10
15
20
25
30
35
40
1
10
100
1000
DC
10ms
100ms
f
= 1 MHz
10
V
DS
- Volts
V
DS
- Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_102N15T(6E)90-30-08
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