TPC8003(TE12L) datasheet, PDF - EEWORLD Datasheet

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TPC8003(TE12L): DescriptionTRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,13A I(D),SO; CategoryDiscrete semiconductor The transistor; File Size313KB，7 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TPC8003(TE12L) Overview

TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,13A I(D),SO

TPC8003(TE12L) Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	13 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	2.4 W
surface mount	YES

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TPC8003

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)

TPC8003

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PC Applications

Small footprint due to small and thin package

Low drain−source ON resistance

: R

DS (ON)

= 5.4 mΩ (typ.)

High forward transfer admittance : |Y

| = 21 S (typ.)

Low leakage current : I

DSS

µA (max) (V

= 30 V)

Enhancement−mode : V

= 0.8~2.5 V (V

V, I

mA)

Unit: mm

Maximum Ratings

(Ta = 25°C)

Characteristics

Drain-source voltage

Drain-gate voltage (R

= 20 kΩ)

Gate-source voltage

Drain current

Pulse

(Note 1)

(t = 10 s)

(Note 2a)

(t = 10 s)

(Note 2b)

Symbol

DSS

DGR

GSS

stg

Rating

±20

2.4

1.0

220

0.24

150

−55

to 150

Unit

JEDEC

°C

―

2-6J1B

Drain power dissipation

JEITA

TOSHIBA

Single pulse avalanche energy

(Note 3)

Avalanche current

Repetitive avalanche energy

(Note 2a) (Note 4)

Channel temperature

Storage temperature range

Weight: 0.080 g (typ.)

Circuit Configuration

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the

next page.

This transistor is an electrostatic sensitive device. Please handle with

caution.

2002-02-06

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