Preliminary
Datasheet
RJK5033DPD
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-state resistance
R
DS(on)
= 0.96
typ. (I
D
= 3 A, V
GS
= 10 V, Ta = 25C)
High speed switching
R07DS0179EJ0100
Rev.1.00
Oct 05, 2010
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
1.
2.
3.
4.
Gate
Drain
Source
Drain
D
G
12
3
S
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
Note3
I
AP
Pch
Note 2
ch-c
Tch
Tstg
Note1
Value
500
30
6
24
6
65
1.92
150
–55 to +150
Unit
V
V
A
A
A
W
C/W
C
C
R07DS0179EJ0100 Rev.1.00
Oct 05, 2010
Page 1 of 6
RJK5033DPD
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V
(BR) DSS
I
DSS
I
GSS
V
GS (off)
R
DS (on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d (off)
t
f
V
DF
t
rr
Min
500
—
—
3.5
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.96
600
70
10
15
20
90
30
0.9
250
Max
—
1
0.1
4.5
1.3
—
—
—
—
—
—
—
1.5
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= 505 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 3 A, V
GS
= 10 V
Note 4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
V
DD
= 200 V
I
D
= 3 A
V
GS
= 10 V
Rg = 10
I
F
= 6 A, V
GS
= 0
Note 4
I
F
= 6 A, V
GS
= 0
V
DD
= 250 V
di
F
/dt = 100 A/s
Note:
4. Pulse test
R07DS0179EJ0100 Rev.1.00
Oct 05, 2010
Page 2 of 6
RJK5033DPD
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
Tc = 25°C
1 shot
12
10
8
6
4
2
0
0
4
8
12
16
20
Ta = 25°C
Pulse Test
Typical Output Characteristics
10 V
8V
7V
6.8 V
6.6 V
6.4 V
6.2 V
6V
I
D
(A)
100
10
10
PW
μ
s
Drain Current
10
0
1
Operation in this
area is limited by
R
DS(on)
1
10
100
μ
s
0.1
Drain Current
=
I
D
(A)
V
GS
= 5.8 V
0.01
0.1
1000
Drain to Source Voltage
V
DS
(V)
Drain to Source Voltage
V
DS
(V)
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Tc =
−25°C
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
12
10
8
I
D
(A)
25°C
75°C
Drain Current
6
4
2
0
0
2
4
6
8
10
1
V
GS
= 10 V
Ta = 25°C
Pulse Test
0.1
1
10
100
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
3.0
2.5
2.0
1.5
1.0
0.5
0
−25
1A
V
GS
= 10 V
Pulse Test
I
D
= 6 A
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
3A
100
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
1
10
100
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Reverse Drain Current
I
DR
(A)
R07DS0179EJ0100 Rev.1.00
Oct 05, 2010
Page 3 of 6
RJK5033DPD
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
Tc = 25°C
f = 1 MHz
Preliminary
Dynamic Input Characteristics (Typical)
V
DS
(V)
I
D
= 6 A
Ta = 25°C
10000
Capacitance C (pF)
1000
Ciss
600
V
DS
V
DD
= 100 V
200 V
400 V
12
Drain to Source Voltage
100
Coss
10
Crss
1
0
400
8
200
V
DD
= 400 V
200 V
100 V
0
8
16
24
32
4
0
0
40
50
100
150
200
250
Drain to Source Voltage
V
DS
(V)
Gate Charge
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
24
5
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
I
D
= 10 mA
4
I
DR
(A)
20
16
12
8
4
0
0
Reverse Drain Current
Gate to Source Cutoff Voltage
V
GS(off)
(V)
V
GS
= 0
Ta = 25°C
Pulse Test
3
1 mA
0.1 mA
2
1
V
DS
= 10 V
0
-25
0
25
50
75
100 125 150
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V
SD
(V)
Case Temperature
Tc (°C)
R07DS0179EJ0100 Rev.1.00
Oct 05, 2010
Page 4 of 6
Gate to Source Voltage
V
GS
(V)
800
V
GS
16
RJK5033DPD
Thermal Impedance vs. Pulse Width
Thermal Impedance
θ
ch – c (°C/W)
10
Preliminary
1
0.1
0.01
Tc = 25°C
Single pulse
0.001
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 200 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0179EJ0100 Rev.1.00
Oct 05, 2010
Page 5 of 6
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