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RJH6087BDPK

Description
Silicon N Channel IGBT High Speed Power Switching
File Size102KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet View All

RJH6087BDPK Overview

Silicon N Channel IGBT High Speed Power Switching

Preliminary
Datasheet
RJH6087BDPK
Silicon N Channel IGBT
High Speed Power Switching
Features
Ultra high speed switching
t
f
= 55 ns typ. (at I
C
= 30 A, V
CC
= 300 V, V
GE
= 15 V, Rg = 5
Ω,
Inductive Load)
Low on-state voltage
Fast recovery diode
R07DS0389EJ0100
Rev.1.00
May 11, 2011
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction temperature
Storage temperature
Symbol
V
CES
V
GES
I
C
ic(peak)
Note1
i
DF
(peak)
Note2
P
C
θj-c
Tj
Tstg
Ratings
600
±30
50
100
100
223.2
0.56
150
–55 to +150
Unit
V
V
A
A
A
W
°C / W
°C
°C
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width limited by maximum junction temperature.
R07DS0389EJ0100 Rev.1.00
May 11, 2011
Page 1 of 7
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