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RJH60D7DPK_10

Description
Silicon N Channel IGBT Application: Inverter
File Size79KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet View All

RJH60D7DPK_10 Overview

Silicon N Channel IGBT Application: Inverter

Preliminary
Datasheet
RJH60D7DPK
Silicon N Channel IGBT
Application: Inverter
Features
Short circuit withstand time (5
s
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.6 V typ. (at I
C
= 50 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 50 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 50 A, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0165EJ0300
Rev.3.00
Nov 16, 2010
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
G
1. Gate
2. Collector
3. Emitter
1
2
3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
i
DF
(peak)
Note1
Note2
P
C
j-c
Note2
j-cd
Note2
Tj
Tstg
Ratings
600
±30
90
50
200
30
120
300
0.42
2.1
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0165EJ0300 Rev.3.00
Nov 16, 2010
Page 1 of 7
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