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RJH60M0DPQ-A0

Description
600 V - 22 A - IGBT Application: Inverter
File Size48KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJH60M0DPQ-A0 Overview

600 V - 22 A - IGBT Application: Inverter

Preliminary Datasheet
RJH60M0DPQ-A0
600 V - 22 A - IGBT
Application: Inverter
Features
Short circuit withstand time (8
s
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.8 V typ. (at I
C
= 22 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 80 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 22 A, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0535EJ0100
Rev.1.00
Sep 02, 2011
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
Note1
I
DF
i
DF
(peak)
Note1
P
C Note2
j-c
Note2
j-cd
Note2
Tj
Tstg
Ratings
600
±30
45
22
90
22
90
140
0.89
2.3
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0535EJ0100 Rev.1.00
Sep 02, 2011
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