Preliminary Datasheet
RJH60M3DPE
600 V - 17 A - IGBT
Application: Inverter
Features
Short circuit withstand time (8
s
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.8 V typ. (at I
C
= 17 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 80 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 17 A, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0533EJ0100
Rev.1.00
Sep 02, 2011
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
C
4
G
1
2
3
E
1. Gate
2. Collector
3. Emitter
4. Collector
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector peak current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
i
DF
(peak)
Note1
Note2
P
C
j-c
Note2
j-cd
Note2
Tj
Tstg
Ratings
600
±30
35
17
70
17
70
113
1.11
4.2
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0533EJ0100 Rev.1.00
Sep 02, 2011
Page 1 of 3
RJH60M3DPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Symbol
I
CES
/ I
R
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
t
sc
Min
—
—
5
—
—
—
—
—
—
—
—
—
—
—
—
6
Typ
—
—
—
1.8
2.2
900
60
30
36
6
16
30
15
80
80
8
Max
5
±1
7
2.3
—
—
—
—
—
—
—
—
—
—
—
—
Unit
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
s
Test Conditions
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 17 A, V
GE
= 15 V
Note3
I
C
= 35 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 17 A
V
CC
= 300 V, V
GE
= 15 V
I
C
= 17 A
Rg = 5
Inductive load
Tc = 100
C
V
CC
360 V, V
GE
= 15 V
I
F
= 17 A
Note3
I
F
= 17 A
di
F
/dt = 100 A/s
Short circuit withstand time
FRD Forward voltage
FRD reverse recovery time
Notes: 3. Pulse test.
V
F
t
rr
—
—
1.3
100
1.7
—
V
ns
R07DS0533EJ0100 Rev.1.00
Sep 02, 2011
Page 2 of 3
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