WTF12A60
WTF12
F12A60
Bi-Directional Triode Thyristor
Features
½
½
½
½
½
Repetitive Peak off -State Voltage:600V
R.M.S On-State Current(I
T(RMS)
=12A)
Isolation voltage(V
ISO
=1500V AC)
High Commutation dv/dt
Halogen free(WTF12A60-HF)
General Description
General purpose switching and phase control applications .These devices
are intented to be interfaced directly to mirocontrollers,logic integrated
circuits and other low power gate trigger circuits such as fan speed and
temperature modulation control,lighting control and static switching relay.
By using an internal ceramic pad, the TO220F series provides voltage
insulated tab (rated at 2500V RMS) complying with UL standards (file
ref.:E347423)
Absolute Maximum Ratings
(T
J
=25℃
symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
FGM
V
RGM
T
J
T
stg
unless otherwise specified)
Parameter
Peak Repetitive Forward Blocking Voltage(gate open) (Note1)
Forward Current RMS(All Conduction Angles, T
J
=58℃)
Peak Forward Surge Current, (1/2 Cycle, Sine Wave,50/60Hz)
Circuit Fusing Considerations (tp=10ms)
Peak Gate Power —Forward,(T
C
=58℃,Pulse With≤1.0us)
Average Gate Power —Forward,(Over any 20ms period)
Peak Gate Current—Forward,T
J
=125℃(20µs,120PPS)
Peak Gate Voltage—Reverse,TJ=125℃(20µs,120PPS)
Junction Temperature
Storage Temperature
Ratings
600
12
119/130
71
5
0.5
2
10
-40~125
-40~150
Units
V
A
A
A
2
s
W
W
A
V
℃
℃
Note1.Although not recommended off -state voltages up to 800v ,may be applied with out damage, but the TRIAC may
switch, to the on-state .the rate of rise of current should not exceed 3A/us.
Thermal Characteristics
Symbol
R
ӨJC
R
ӨJA
Parameter
Thermal Resistance Junction to case
Thermal resistance Junction to Ambient
Value
3.3
120
Units
℃/W
℃/W
Rev.A May.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WTF12A60
F12A60
Electrical Characteristics
(Tc=25℃ unless otherwise specified)
Symbol
I
DRM
(V
D
=V
DRM
/V
RRM
)
V
TM
T
C
=125℃
-
-
-
-
-
-
-
-
0.2
10
50
-
-
-
-
-
-
-
-
-
-
-
2
1.4
30
30
30
1.2
1.2
1.2
-
-
-
V
V/µs
A/µs
V
mA
mA
V
Forward "On" Voltage (Note2) (I
TM
=20A Peak @ TA =25℃)
Gate Trigger Current (Continuous dc)
I
GT
(V
D
=6 Vdc,R
L
=10 Ohms)
T2+G+
T2+G-
T2-G-
Gate Trigger Voltage (Continuous dc)
V
GT
(V
D
=6 Vdc,R
L
=10 Ohms)
T2+G+
T2+G-
T2-G-
V
GD
dV/dt
dV
com
/dt
Gate threshold voltage (T
J
=125℃,V
D
=0.5V
DRM
)
Critical rate of rise of commutation Voltage(V
D
=0.67V
DRM
)
Critical rate of rise On-State voltage
(V
D
=400V,T
j
=125℃,dI
com
/dt=0.5A/µs)
Holding Current
I
H
(V
D
=12Vdc, intiationg current=20mA)
-
20
-
mA
Characteristics
Peak Forward or Reverse Blocking Current
T
C
=25℃
Min.
-
Typ.
-
Max.
10
Unit
µA
Note2.Forward current applied for 1 ms maximum duration ,duty cycle
2/6
Steady, keep you advance
WTF12A60
F12A60
Fig .1 On-State Voltage vs on-State Current
Fig.2 On-State current vs maximum
Power Disspation
Fig . 3 Gate Characteristeristics
Fig.4 On-State Current vs Allowable
case Temperature
Fig.5 Surge On-State Current Ration
(Non-Repetitive)
Gig.6 Gate Trigger Current vs
Junction Temperation
3/6
Steady, keep you advance
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