WTPA24A60CW
Bi-Directional Triode Thyristor
irecti
Trio
rist
sto
Features
eat
■ Repetitive Peak off-State Voltage:600V
■ R.M.S On-State Current(I
T(RMS)
=24A
■ Low on-state voltage: V
TM
=1.55V(Max.)@ I
T
=11A
■ High Commutation dV/dt.
General Description
escri tio
rip
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
By using an internal ceramic pad, the WTPA series provides
Voltage insulated tab (rated at 2500V RMS) complying with
UL standards (file ref.:E347423)
Absolute Maximum Ratings
(TJ=25℃ unless otherwise specified)
imu
ing
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
FGM
V
RGM
T
J,
T
stg
Parameter
amet
Peak Repetitive Forward Blocking Voltage(gate open)
Forward Current RMS (All Conduction Angles, Tc=58℃)
Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 50/60 Hz)
Circuit Fusing Considerations (t p= 10 ms)
Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us)
Average Gate Power — Forward, (Over any 20ms period)
Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS)
Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS)
Junction Temperature
Storage Temperature
(Note 1)
Value
600
24
250/260
340
5
1
4
10
-40~125
-40~150
Units
V
A
A
A
2
s
W
W
A
V
℃
℃
Note1:
.Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC
te1:
may switch to the on-state. The rate of rise of current should not exceed 3A/us.
Thermal Characteristics
rmal Cha act ris
Symbol
R
QJC
R
QJA
Rev. B
Parameter
amet
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min
-
-
Typ
Typ
-
-
Max
Max
1.7
60
Units
℃/W
℃/W
Nov.2008
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
T01-3
WTPA24A60CW
Electrical Characteristics
(Tc = 25°C
unless otherwise
specified)
ectr
tri
Cha act ris tics
Symbol
I
DRM/
/I
RRM
V
TM
Characteristics
Peak Forward or Reverse Blocking Current
(V
DRM
=V
RRM,
)
Tc=25℃
Tc=125℃
Min
-
-
-
-
-
-
-
-
-
0.2
1000
22
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
5
3
1.55
35
35
35
1.2
1.2
1.2
-
-
-
80
100
16
Unit
μA
mA
V
Forward “On” Voltage(Note2) (I
TM
= 35A Peak @ TA = 25°C)
T2+G+
Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc, RL = 33Ω)
I
GT
T2+G-
T2-G-
T2+G+
mA
V
GT
Gate Trigger Voltage (Continuous dc)
(V
D
=12 Vdc, RL = 33Ω)
Gate threshold voltage(Tj=125℃, V
D
= V
DRM ,
RL = 3.3kΩ)
Critical rate of rise of commutation Voltage (V
D
=0.67V
DRM
)
Critical rate of rise On-State voltage(V
D
=400V,Tj=125℃)
Holding Current (I
T
= 500 mA)
I
G
=1.2I
GT
Dynamic resistance
T2+G-
T2-G-
V
V
GD
dV/dt
dI
com
/dt
I
H
I
L
R
d
V
V/μs
A/μs
mA
mA
mΩ
Note 2. Forward current applied for 1 ms maximum duration, duty cycle
2/5
Steady, keep you advance
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