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SBR13003B3

Description
High Voltage Fast-Switching NPN Power Transistor
File Size223KB,5 Pages
ManufacturerWINSEMI
Websitehttp://www.winsemi.com/
Download Datasheet View All

SBR13003B3 Overview

High Voltage Fast-Switching NPN Power Transistor

SBR13003B3
High Voltage Fast-Switching NPN Power Transistor
Features
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc* = 25℃
Total Dissipation at Ta* = 25℃
Operation Junction Temperature
Storage Temperature
Test Conditions
V
BE
= 0
I
B
= 0
I
C
= 0
Value
700
400
9.0
1.5
3.0
0.75
Units
V
V
V
A
A
A
A
W
t
P
= 5ms
1.5
20
0.8
- 40 ~ 150
- 40 ~ 150
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Thermal Characteristics
Symbol
R
θJc
R
θJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
3.12
89
Units
/W
/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
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